71342LA35PF Allicdata Electronics
Allicdata Part #:

71342LA35PF-ND

Manufacturer Part#:

71342LA35PF

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 32K PARALLEL 64TQFP
More Detail: SRAM - Dual Port, Asynchronous Memory IC 32Kb (4K ...
DataSheet: 71342LA35PF datasheet71342LA35PF Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tray 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 32Kb (4K x 8)
Write Cycle Time - Word, Page: 35ns
Access Time: 35ns
Memory Interface: Parallel
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Supplier Device Package: 64-TQFP (14x14)
Base Part Number: IDT71342
Description

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Introduction: Memory is a fundamental component in computing, utilized to store and process data. This technology underpins numerous types of devices, from personal computers to smartphones, and is constantly being improved to increase speed, capacity and efficiency. The 71342LA35PF is a type of memory module, a designated chip consisting of a number of memory cells. This document explores the application fields and working principles of the 71342LA35PF.

Uses of the 71342LA35PF: The 71342LA35PF module has been developed for a wide range of applications, from embedded systems to communications and industrial automation. Its small size and low power requirements make it an ideal choice for systems requiring a footprint-friendly solution that can provide both performance and data storage. For example, the 71342LA35PF has been used to create computer storage and data centers using a form factor that is both cost-effective and reduce maintenance requirements.

The 71342LA35PF is also often employed by developers working on low-power embedded applications. Its capacity allows it to be used to store different types of system data, particularly in applications that require uninterrupted access to data even at low power. The 71342LA35PF is also composed of non-volatile cells, meaning information processing can be performed without power, thus enabling it to maintain system stability throughout device shutdowns and low-power modes.

Working Principle of the 71342LA35PF: The 71342LA35PF operates on a single-event feedback loop, with multiple nodes that interact with each other and the memory itself to modify synchronous and asynchronous signals. The 71342LA35PF also employs an array of memory cells, arranged in rows and columns, that operate in a manner similar to SRAM (static random access memory). Each cell has its own address, which allows for data to be fetched or stored independently from the others.

The 71342LA35PF is also capable of providing a constant read latency, during which current cells can be read in a short amount of time. This provides a significant advantage when compared to other memory modules, as it reduces overall power consumption and increases system performance. Additionally, the 71342LA35PF also utilizes an advanced data prefetch algorithm that can reduce wait time between fetches, leading to increased system speeds.

Additionally, the 71342LA35PF employs error correction techniques that help reduce memory write errors and improve the integrity of stored data. These techniques leverage redundancy and multiple-way error detection schemes, allowing them to accurately detect and rectify instances of data corruption.

Conclusion: The 71342LA35PF has several uses, ranging from embedded systems to industrial automation and communications. Its small size and low power requirements make it an ideal candidate for embedded applications and other devices requiring a small form factor. Additionally, the 71342LA35PF operates using feedback loops and an array of memory cells, enabling fast reads, low power consumption and error correction techniques. All of these features make the 71342LA35PF an attractive option for developers seeking a powerful and efficient memory solution.

The specific data is subject to PDF, and the above content is for reference

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