7140LA25J8

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Memory Type:	Volatile
Memory Format:	SRAM
Technology:	SRAM - Dual Port, Asynchronous
Memory Size:	8Kb (1K x 8)
Write Cycle Time - Word, Page:	25ns
Access Time:	25ns
Memory Interface:	Parallel
Voltage - Supply:	4.5 V ~ 5.5 V
Operating Temperature:	0°C ~ 70°C (TA)
Mounting Type:	Surface Mount
Package / Case:	52-LCC (J-Lead)
Supplier Device Package:	52-PLCC (19.13x19.13)
Base Part Number:	IDT7140

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Introduction

7140LA25J8 is a type of memory device commonly used in many applications and fields, including embedded systems, wired and wireless communication systems, industrial control, intelligent home applications and automative applications. In this article, we are going to discuss the application field and working principle of 7140LA25J8 memory device.

Application Fields

7140LA25J8 memory device is widely used in embedded systems. It is widely used because of its fast performance, small size, low power consumption, high integration and wide temperature range. It is used in those cases where a small amount of non-volatile storage and the ability to retain data in the event of a power failure is needed. For example, 7140LA25J8 memory device can be used for storing code for microprocessors in embedded systems. 7140LA25J8 memory device also plays an important role in wired and wireless communication systems. It can be used in wireless transceivers, satellite transponders and RF communication systems. 7140LA25J8 memory device is also used in industrial control, providing high-speed non-volatile storage for controller data and parameters. It can also be used in data storage and transportation applications, such as in drones, unmanned vehicles and robots. In addition, 7140LA25J8 memory device is used in intelligent home applications. It can be used for storing data for smart home appliances, such as smart thermostats, lighting, security and network devices. It is also used in automative applications, such as onboard computers, smart GPS systems, data transmission and analysis systems.

Working Principle

7140LA25J8 memory device is a type of flash memory. It uses a floating gate, which is a thin floating polysilicon layer between two control gates. The floating gate is surrounded by a dielectric layer and can store electrons, which represent digital information. By applying a positive voltage to the source and a negative voltage to the drain, current can be injected into the floating gate, causing electrons to accumulate on it. Likewise, electrons can be removed from the floating gate by applying a negative voltage to the source and a positive voltage to the drain. This type of memory is non-volatile, meaning that it will retain its stored information even when powered off.7140LA25J8 memory device is a type of NOR flash memory. NOR flash memory is faster than NAND flash memory and can be directly accessed by the CPU. It can be used for code storage, individual parameter storage, and mass data storage. The access speed of 7140LA25J8 memory device is up to 200Mbps.

Conclusion

7140LA25J8 memory device is an ideal memory device for many applications, such as embedded systems, wired and wireless communication systems, industrial control, intelligent home applications and automative applications. It has a fast access speed of up to 200 Mbps and is non-volatile, meaning that it can retain its stored information even when powered off. By understanding its application field and working principle, users can take full advantage of its features and better utilize it in their applications.

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