7140SA100CB Allicdata Electronics
Allicdata Part #:

7140SA100CB-ND

Manufacturer Part#:

7140SA100CB

Price: $ 51.23
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 8K PARALLEL SB48
More Detail: SRAM - Dual Port, Asynchronous Memory IC 8Kb (1K x...
DataSheet: 7140SA100CB datasheet7140SA100CB Datasheet/PDF
Quantity: 1000
40 +: $ 46.57400
Stock 1000Can Ship Immediately
$ 51.23
Specifications
Series: --
Packaging: Tube 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 8Kb (1K x 8)
Write Cycle Time - Word, Page: 100ns
Access Time: 100ns
Memory Interface: Parallel
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -55°C ~ 125°C (TA)
Mounting Type: Through Hole
Package / Case: 48-DIP (0.600", 15.24mm)
Supplier Device Package: 48-SIDE BRAZED
Base Part Number: IDT7140
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Memory is an important component of computer construction. It plays a vital role in our daily work. The 7140SA100CB, a dynamic random access memory (DRAM), is a key component in today\'s technology systems.

The 7140SA100CB is widely used in both embedded and military-grade hardware used in a wide range of applications. It features a wide operating temperature range and offers superior durability when compared to many other DRAMs of the same type.

In terms of applications, the 7140SA100CB can be used in a wide range of applications, such as embedded systems, military applications, and industrial systems. The device is ideal for high-end embedded systems that are used in areas with high temperatures, or in environments where electrical interference is present.

The 7140SA100CB works by using a process called row cycling. This process is used to alternately activate and deactivate memory rows. Each row contains several data cells and is activated in order to read the data contained within. After each row is activated, it is deactivated and the next row is accessed. This method allows for a large amount of memory to be stored in a relatively small space.

In addition, the device features an advanced buffering technology, which further improves its performance. The device’s buffering technology reduces power consumption, improves data retrieval speeds, and allows for fewer bursts of commands to control the memory locations.

Finally, the 7140SA100CB also features error correcting code (ECC) technology, which helps reduce data corruption. The ECC technology is used to detect and correct single bit errors in memory data by using a code system. This helps increase the overall reliability of the device, which is essential in critical applications.

Overall, the 7140SA100CB DRAM is a versatile and reliable memory device that is suitable for a wide range of applications. It offers superior durability and wide temperature ranges, as well as advanced buffering and ECC technologies for improved reliability. As such, it is a great option for embedded and military-grade hardware.

The specific data is subject to PDF, and the above content is for reference

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