7142SA55J

Series:	--
Packaging:	Tube
Part Status:	Obsolete
Memory Type:	Volatile
Memory Format:	SRAM
Technology:	SRAM - Dual Port, Asynchronous
Memory Size:	16Kb (2K x 8)
Write Cycle Time - Word, Page:	55ns
Access Time:	55ns
Memory Interface:	Parallel
Voltage - Supply:	4.5 V ~ 5.5 V
Operating Temperature:	0°C ~ 70°C (TA)
Mounting Type:	Surface Mount
Package / Case:	52-LCC (J-Lead)
Supplier Device Package:	52-PLCC (19.13x19.13)
Base Part Number:	IDT7142

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7142SA55J Memory Applications and Working Principles

Memory is an integral component of modern digital electronics. Memory allows a device to store data while it is powered off, and it dictates how information, code, or programs may be accessed once the device is powered on. 7142SA55J is a high-density memory component designed for embedded applications — making it an ideal choice for today’s consumer electronics. This article explores the applications and principles of 7142SA55J memory.

Applications of 7142SA55J Memory

7142SA55J is a versatile memory component and is used in a wide range of consumer electronics products. Its small size makes it suitable for embedding in mobile devices such as smartphones and tablets, as well as in larger desktop computers. 7142SA55J is also used in smart TVs, gaming consoles and other digital audio and video devices.On the business side, 7142SA55J is used in enterprise systems for data storage and retrieval. In addition, many industrial and automotive applications also use 7142SA55J as a source of onboard storage.

7142SA55J Memory Working Principles

7142SA55J is a type of semiconductor memory, made up of a series of connected memory cells which store the binary data. Each memory cell is made up of either a single transistor, depending on the design, or two transistors and a capacitor. Information is stored within the cells using the on/off state of the transistors or capacitors, or a combination thereof. 7142SA55J is a DRAM, which stands for “dynamic random access memory”. This type of memory device is comprised of an array of capacitors, each of which can store a single bit of data. The data stored in the memory cells is volatile, meaning that it is lost when the power is turned off. To maintain the data, the data must be periodically refreshed by the system.When a read request is issued to 7142SA55J memory, the memory cells are activated to deliver the requested data. Conversely, when a write request is issued, the data is stored in the specified memory cell. The stored data is maintained using the refresh procedure.

Conclusion

7142SA55J is a high-density memory component designed for embedded applications, such as mobile devices, smart TVs, gaming consoles, enterprise systems, industrial and automotive applications. It is a type of DRAM, which stands for dynamic random access memory. This type of memory device is comprised of an array of capacitors, each of which can store a single bit of data. Data can be read from and written to the memory cells using the on/off state of the transistors or capacitors. Overall, 7142SA55J memory can provide a reliable, low-cost storage solution for a wide range of applications. With its ability to store large amounts of information and read/write speed, 7142SA55J is an ideal choice for today’s demanding digital applications.

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