71T75802S200BGG8

Write Cycle Time - Word, Page:	--
Base Part Number:	IDT71T75
Supplier Device Package:	119-PBGA (14x22)
Package / Case:	119-BGA
Mounting Type:	Surface Mount
Operating Temperature:	0°C ~ 70°C (TA)
Voltage - Supply:	2.375 V ~ 2.625 V
Memory Interface:	Parallel
Access Time:	3.2ns
Series:	--
Clock Frequency:	200MHz
Memory Size:	18Mb (1M x 18)
Technology:	SRAM - Synchronous ZBT
Memory Format:	SRAM
Memory Type:	Volatile
Part Status:	Active
Packaging:	Tape & Reel (TR)

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71T75802S200BGG8 Memory — Application Field and Working Principle

Introduction

71T75802S200BGG8 memory is a type of dynamic random access memory (DRAM) with integrated logic manufactured by Macronix. It is a type of non-volatile memory, meaning that it stores information even when there is no power. The 71T75802S200BGG8 memory is a high-density and low-power alternative to conventional DRAM. It is used in a variety of applications including embedded systems, industrial control systems, automotive systems, and more.

Application Field

71T75802S200BGG8 memory is used in a variety of different applications, including automotive systems, embedded systems, industrial control systems, and more. It is particularly well-suited for applications that require a high level of reliability, power efficiency, and a small form factor.In automotive applications, 71T75802S200BGG8 memory is used for controlling on-board systems such as navigation and entertainment systems. It is also well-suited for applications such as real-time control of steering and braking systems, as well as other advanced electronic systems.In embedded systems, 71T75802S200BGG8 memory is often used for the storage of code and data in applications where the memory needs to be low-power, compact, and reliable. This includes applications such as industrial automation, medical devices, consumer electronics, and more.In industrial control systems, 71T75802S200BGG8 memory is used for storing large amounts of data and code, allowing for the quick and efficient control of complex machinery. It is well-suited for large-scale industrial systems, such as energy management systems, factory automation systems, and other industrial applications.

Working Principle

71T75802S200BGG8 memory works by storing a small amount of data in a single memory cell. The cells are arranged in a grid format, with each cell connected to two bit lines and two word lines. Each memory cell has two transistors, one of which is used to control the voltage on the bit line, while the other is used to control the voltage on the word line.When a read or write operation is requested, the address of the memory cell to be accessed is sent to the memory controller. The memory controller then sends a signal to the appropriate word line and bit line to access the memory cell. A low voltage is sent to the word line, which causes the corresponding transistor in the memory cell to activate. The transistor then pulls the bit line low, allowing electrons to be stored in the memory cell. For a write operation, the data stored on the bit line is sent to the memory cell and stored. For a read operation, the stored data is then read from the memory cell and sent to the output pins.

Conclusion

71T75802S200BGG8 memory is a type of DRAM that is used in a variety of applications, including automotive systems, embedded systems, and industrial control systems. Its small form factor and high-density make it an ideal solution for applications where space and power consumption are both important factors. The working principle of 71T75802S200BGG8 memory involves the use of two transistors and two bit lines to access a single memory cell and store or retrieve data. This makes it a reliable and efficient memory solution for a variety of different applications.

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