71V547S75PFG Allicdata Electronics
Allicdata Part #:

71V547S75PFG-ND

Manufacturer Part#:

71V547S75PFG

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 4.5M PARALLEL 100TQFP
More Detail: SRAM - Synchronous ZBT Memory IC 4.5Mb (128K x 36)...
DataSheet: 71V547S75PFG datasheet71V547S75PFG Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tray 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous ZBT
Memory Size: 4.5Mb (128K x 36)
Write Cycle Time - Word, Page: --
Access Time: 7.5ns
Memory Interface: Parallel
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x14)
Base Part Number: IDT71V547
Description

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The 71V547S75PFG is a type of memory technology that is used in electronic devices. It is a type of non-volatile memory, which means it does not lose data when power is removed from the device. The 71V547S75PFG is often used as a non-volatile memory solution in embedded systems such as automobiles, security systems, medical devices, industrial machinery and process control systems. It is also used in consumer electronics such as cell phones, game consoles and personal computers.

The 71V547S75PFG operates with three internal hardware blocks; the control logic, the write buffer and the non-volatile memory array. The control logic block handles command, control and signaling while the write buffer is used to store data before it is written to the non-volatile memory array. The non-volatile memory array is the actual memory storage component.

The 71V547S75PFG memory typically uses a NOR type of flash memory cell. NOR type of flash memory cells are used because they are extremely reliable, fast, and can be used in conjunction with a variety of different types of applications. The NOR type of cells use floating gate transistors for storage, and capacitor based logic for programming and reading the memory cells. They are also much faster to read and write than other types of flash memory cells.

In order to program or read data from the 71V547S75PFG memory, the write buffer is loaded with the data and then sent to the control logic. The control logic then writes or reads the data to or from the memory array. The program cycle is executed with a read verify operation, this ensures data integrity as the data is written to the memory array. The write buffer is also used to read the data from the memory array and then display the data.

The 71V547S75PFG is a highly reliable, fast, and inexpensive solution for embedded applications, which require non-volatile memory. With the ability to store a large number of bits of information, the 71V547S75PFG is an ideal solution for applications that need to store a large amount of data. The 71V547S75PFG can operate for a long period of time and is designed to be durable and resist shock, vibration and other environmental conditions. The 71V547S75PFG is also designed to use minimal power and can be used in low power applications, such as battery operated devices.

The specific data is subject to PDF, and the above content is for reference

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