71V65603S150BGGI8 Allicdata Electronics
Allicdata Part #:

71V65603S150BGGI8-ND

Manufacturer Part#:

71V65603S150BGGI8

Price: $ 10.62
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 9M PARALLEL 119PBGA
More Detail: SRAM - Synchronous ZBT Memory IC 9Mb (256K x 36) P...
DataSheet: 71V65603S150BGGI8 datasheet71V65603S150BGGI8 Datasheet/PDF
Quantity: 1000
1000 +: $ 9.65363
Stock 1000Can Ship Immediately
$ 10.62
Specifications
Write Cycle Time - Word, Page: --
Base Part Number: IDT71V65603
Supplier Device Package: 119-PBGA (14x22)
Package / Case: 119-BGA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135 V ~ 3.465 V
Memory Interface: Parallel
Access Time: 3.8ns
Series: --
Clock Frequency: 150MHz
Memory Size: 9Mb (256K x 36)
Technology: SRAM - Synchronous ZBT
Memory Format: SRAM
Memory Type: Volatile
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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Memory

71V65603S150BGGI8 is a state-of-the-art in non-volatile memories, also known as embedded memories, offering an optimal blend of density, field-programmability, speed, and low power consumption. This type of memory is used in a variety of applications, including automotive, consumer, industrial, and medical.

Application Field

71V65603S150BGGI8 is ideal for use in applications where space is a premium, such as wired and wireless communications, automotive electronics, consumer electronics, industrial controls, and medical devices. It is uniquely suitable for situations that require field programming, such as remote sensor modules, automotive ECU program upgrade, and medical device firmware updates.

The small package size, low power consumption, and ultra-high density makes this memory ideal for devices that require a lightweight design that can be rapidly updated or upgraded. It also offers a high level of endurance, making it suitable for applications that require frequent updates. Furthermore, its power-down protection circuitry makes it an ideal choice for battery-powered designs.

Working Principle

71V65603S150BGGI8 is an electrically programmable memory, meaning that it can be programmed using electrical signals, instead of using a mechanical device. When a voltage is applied to the memory cell, electrons in the channel are drawn away or towards the channel edges, changing the channel’s conductive state. This allows the memory cell to store a single bit (1 or 0).

71V65603S150BGGI8 also offers a number of other features, such as on-chip ECC (Error Correction Code) decoding, thermal monitoring, and security options that make it well-suited for high-reliability applications. The on-chip ECC support reduces debugging time and the risk of undetected data errors, while the thermal monitoring feature monitors the memory temperature to protect the memory cells from overheating and resulting damage.

In summary, 71V65603S150BGGI8 is a versatile non-volatile memory solution that provides a cost-effective, compact, and power-efficient solution for a variety of applications. Its electrical programming capabilities and additional features make it ideal for high-density, high-reliability applications such as automotive, consumer, industrial, and medical.

The specific data is subject to PDF, and the above content is for reference

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