71V65903S85BQG Allicdata Electronics
Allicdata Part #:

71V65903S85BQG-ND

Manufacturer Part#:

71V65903S85BQG

Price: $ 10.86
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 9M PARALLEL 165CABGA
More Detail: SRAM - Synchronous ZBT Memory IC 9Mb (512K x 18) P...
DataSheet: 71V65903S85BQG datasheet71V65903S85BQG Datasheet/PDF
Quantity: 1000
1 +: $ 10.86000
10 +: $ 10.53420
100 +: $ 10.31700
1000 +: $ 10.09980
10000 +: $ 9.77400
Stock 1000Can Ship Immediately
$ 10.86
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous ZBT
Memory Size: 9Mb (512K x 18)
Write Cycle Time - Word, Page: --
Access Time: 8.5ns
Memory Interface: Parallel
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-TBGA
Supplier Device Package: 165-CABGA (13x15)
Base Part Number: IDT71V65903
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

.

Memory is an integral part of all digital devices and systems, providing both temporary and permanent storage for data, instructions and information. 71V65903S85BQG is a type of memory, it is usually used in areas such as high-performance embedded systems, servers and enterprise storage, but also find many other types of uses in many different applications.

Application Field:

71V65903S85BQG, or Dynamic random-access memory, is a type of RAM that offers fast access to data stored on it while also allowing the user to rewrite the, hence the "dynamic" part of its name. It is mainly used in environments where great performances and quick access time are required. It also finds a wide range of applications in embedded systems, as it offers high integration with an integrated controller, built-in ECC support, and options for multiple data bus width. It is being used for high-performance embedded systems, server and enterprise storage, embedded PCs, and industrial automation.

Working Principle:

The working principle of 71V65903S85BQG memory is relatively simple. It is composed of cells, each one containing one bit of data, and each row of cells is called a word line. When an address is received, the memory controller uses a row decoder and a row multiplexer to select the correct row of cells to access. On that row, the data of each cell can be written or read. To read the data, the controller uses a pair of sense amplifiers, which detect the small difference in voltage between the chips in a row and amplify it so that it is easier to detect and read.

Writing the data is a bit more complicated, as it requires the memory controller to know what data it wants to write. In order to do this, the controller uses a row drive and a column amplifier. The row drive is configured to send a "read" signal to the chips in the row that needs to be written, while the column amplifier is used to determine which cells will be written.

When the cell data has been successfully written, the memory controller sends a "write flush" signal to all the chips in the row that was written, which causes them to synchronize the data, and at the same time, reset all the cells to the same value.

The specific data is subject to PDF, and the above content is for reference

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