71V65603S150PFGI8 Allicdata Electronics
Allicdata Part #:

71V65603S150PFGI8-ND

Manufacturer Part#:

71V65603S150PFGI8

Price: $ 10.04
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 9M PARALLEL 100TQFP
More Detail: SRAM - Synchronous ZBT Memory IC 9Mb (256K x 36) P...
DataSheet: 71V65603S150PFGI8 datasheet71V65603S150PFGI8 Datasheet/PDF
Quantity: 1000
1000 +: $ 9.11960
Stock 1000Can Ship Immediately
$ 10.04
Specifications
Write Cycle Time - Word, Page: --
Base Part Number: IDT71V65603
Supplier Device Package: 100-TQFP (14x14)
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.135 V ~ 3.465 V
Memory Interface: Parallel
Access Time: 3.8ns
Series: --
Clock Frequency: 150MHz
Memory Size: 9Mb (256K x 36)
Technology: SRAM - Synchronous ZBT
Memory Format: SRAM
Memory Type: Volatile
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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Memory Applications and Working Principles of 71V65603S150PFGI8

Memory is essential part of an integrated circuit and plays an important role in data and information processing.The 71V65603S150PFGI8 is an innovative type of memory that can be used in many different applications.The memory is a multi- Bit Memory System and it is also referred to as a 3T-SRAM.By using a combination of three transistors and two capacitors, the 71V65603S150PFGI8 can be used in a variety of applications.This article will explain the different applications and working principles of the 71V65603S150PFGI8.

Applications

The 71V65603S150PFGI8 can be used in a variety of applications such as, but not limited to, Cellular and Mobile Phones, Automotive, Audio and Video, Energy, Military, Networking and Computing.This ever-growing list of applications only continues to grow as new technologies emerge.

The 71V65603S150PFGI8 is also used in industrial, aerospace and medical applications.This memory has been tested in harsh environment such as radiation, temperature, humidity and extreme pressures or altitudes.The 71V65603S150PFGI8 has proven to be a key component to a wide variety of applications and can be designed to fit any application.

Working Principle

The 71V65603S150PFGI8 uses three transistors (p-channel, n-channel and depletion mode MOSFET) and two capacitors to create a single-ended read/write memory device.The circuit enables a single-ported non-volatile memory in which data can be stored permanently.The memory cells consist of a p-channel and n-channel transistor and two capacitors, which are used to store one bit of data.

The working of the 71V65603S150PFGI8 memory cell is based on voltage threshold detection.The state of the memory cell is read or written depending on the operation mode.For write operations, the data is stored by providing a voltage to the cell which is above the cell’s threshold voltage.For reading operations, the cell is initialized and a voltage is applied to the cell which is below the cell’s threshold voltage.The cell’s voltage changes according to the data stored and this can be used to distinguish between 0 and 1 if the voltage is above or below the threshold voltage.

Conclusion

The 71V65603S150PFGI8 is an innovative technology which can be used in a variety of applications.It is made up of three transistors and two capacitors and works on the principle of voltage threshold detection.The 71V65603S150PFGI8 has been tested in numerous applications and has proven to be a reliable and efficient memory solution.

The specific data is subject to PDF, and the above content is for reference

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