71V67602S150BGG Allicdata Electronics
Allicdata Part #:

71V67602S150BGG-ND

Manufacturer Part#:

71V67602S150BGG

Price: $ 13.59
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 9M PARALLEL 119PBGA
More Detail: SRAM - Synchronous Memory IC 9Mb (256K x 36) Paral...
DataSheet: 71V67602S150BGG datasheet71V67602S150BGG Datasheet/PDF
Quantity: 1000
84 +: $ 12.36170
Stock 1000Can Ship Immediately
$ 13.59
Specifications
Write Cycle Time - Word, Page: --
Base Part Number: IDT71V67602
Supplier Device Package: 119-PBGA (14x22)
Package / Case: 119-BGA
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135 V ~ 3.465 V
Memory Interface: Parallel
Access Time: 3.8ns
Series: --
Clock Frequency: 150MHz
Memory Size: 9Mb (256K x 36)
Technology: SRAM - Synchronous
Memory Format: SRAM
Memory Type: Volatile
Part Status: Active
Packaging: Tray 
Description

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Memory technologies are becoming increasingly important as the world continues to become increasingly digital and as a result, there is a need for fast and reliable storage solutions. The 71V67602S150BGG is a non-volatile, dual-bank memory chip that offers a great deal of speed, reliability and flexibility and is used in a number of applications. In this article, an overview is provided of the 71V67602S150BGG application field and its working principle.

The 71V67602S150BGG is designed for applications requiring high speed data, information and application storage. It is especially suitable for embedded and rugged industrial applications that need to perform operations such as audio/video recording, data/control acquisition, logistics, and other sensitive and demanding applications.

The 71V67602S150BGG offers a high level of flexibility and storage capacity, making it suitable for applications where a large amount of data needs to be stored and accessed quickly and reliably. The chip is capable of storing up to 16MB of data, including text, data, audio, video, and other media. The chip supports read/write speeds of up to 705Mbit/s per second and provides a wide range of capabilities including error correction, data security, and power management.

The 71V67602S150BGG offers a dual-bank architecture which enables fast access to data stored in both banks. This makes the chip highly suitable for applications which require rapid access to data stored in different banks of memory. The dual-bank architecture also allows the chip to be used for high-performance tasks such as video editing and gaming, as data from both banks can be accessed simultaneously.

The 71V67602S150BGG also features built-in self-diagnostic features that allow it to detect errors, correct them and prevent data corruption. The chip also supports both synchronous and asynchronous operations for increased performance and flexibility.

The working principle of the 71V67602S150BGG is based on the use of static RAM (SRAM) cells, which store data in a binary format when they are activated. The chip is comprised of 64MB of SRAM arranged in 64 banks of 1024 memory cells. When an instruction is received from the user, the chip determines which bank of memory cells needs to store or read the data, and then fetches the data from the corresponding bank of cells.

Once the data has been fetched, the chip then executes the instruction and sends it to the appropriate output device. The chip also supports a range of other operations such as error correction and power management.

The 71V67602S150BGG is a highly versatile and reliable memory chip that offers a great deal of speed and flexibility. It is used in a wide range of applications, such as embedded and rugged industrial applications, and its dual-bank architecture enables fast access to data stored in both banks. The chip also features advanced self-diagnostic features, error correction, and power management capabilities which make it highly resilient and reliable.

The specific data is subject to PDF, and the above content is for reference

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