71V67803S150BQ Allicdata Electronics
Allicdata Part #:

71V67803S150BQ-ND

Manufacturer Part#:

71V67803S150BQ

Price: $ 10.86
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC SRAM 9M PARALLEL 165CABGA
More Detail: SRAM - Synchronous Memory IC 9Mb (512K x 18) Paral...
DataSheet: 71V67803S150BQ datasheet71V67803S150BQ Datasheet/PDF
Quantity: 1000
136 +: $ 9.87028
Stock 1000Can Ship Immediately
$ 10.86
Specifications
Write Cycle Time - Word, Page: --
Base Part Number: IDT71V67803
Supplier Device Package: 165-CABGA (13x15)
Package / Case: 165-TBGA
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135 V ~ 3.465 V
Memory Interface: Parallel
Access Time: 3.8ns
Series: --
Clock Frequency: 150MHz
Memory Size: 9Mb (512K x 18)
Technology: SRAM - Synchronous
Memory Format: SRAM
Memory Type: Volatile
Part Status: Active
Packaging: Tray 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

71V67803S150BQ belongs to Memory devices and is a Quad-SPI Flash Memory. This type of memory is chosen for its high speed at which data can be read, written and stored.

The 71V67803S150BQ Memory devices utilizes 4 full-duplex data I/O lines for direct communication with an external processor or device. It allows data to be transmitted in both directions simultaneously and at a higher speed than with traditional SPI operations. The Quad-SPI also supports higher density memory components than the traditional SPI, making it an ideal choice for applications that require large amounts of data storage.

The 71V67803S150BQ Memory is currently being utilized in a wide range of applications such as embedded systems, telecommunication, industrial control and consumer electronics. This type of memory is especially suitable for applications that require high-speed operations and data transactions. In addition, the Quad-SPI Memory also provides significant advantages such as high performance and low power consumption.

The working principle of the 71V67803S150BQ Memory device is relatively simple. When power is applied, an internal clock begins synchronizing, allowing parallel data communications via the four I/O lines. Data is read from or written to the Memory device on the rising edge of the clock signal and remains stable until the next rising edge. The Memory can also perform read-modify-write operations to allow multiple data transactions.

In summary, the 71V67803S150BQ Memory devices are Memory components utilized in a wide range of applications, offering high speed and low power consumption. Its Quad-SPI implementation allows for parallel data communications and high-density storage, making it an ideal choice for applications that require fast data transfers and high memory capacity.

The specific data is subject to PDF, and the above content is for reference

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