72265LA10TFG8 Allicdata Electronics
Allicdata Part #:

72265LA10TFG8-ND

Manufacturer Part#:

72265LA10TFG8

Price: $ 26.44
Product Category:

Integrated Circuits (ICs)

Manufacturer: IDT, Integrated Device Technology Inc
Short Description: IC FIFO 8KX18 LP 10NS 64QFP
More Detail: N/A
DataSheet: 72265LA10TFG8 datasheet72265LA10TFG8 Datasheet/PDF
Quantity: 1000
1000 +: $ 24.03630
Stock 1000Can Ship Immediately
$ 26.44
Specifications
Bus Directional: Uni-Directional
Base Part Number: 72265
Supplier Device Package: 64-TQFP (10x10)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 70°C
FWFT Support: Yes
Retransmit Capability: Yes
Programmable Flags Support: Yes
Expansion Type: Depth, Width
Series: 7200
Current - Supply (Max): 80mA
Voltage - Supply: 4V ~ 5.5V
Access Time: 8ns
Data Rate: 100MHz
Function: Synchronous
Memory Size: 288K (16K x 18)
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The 72265LA10TFG8 is a type of dynamic random access memory (DRAM) device which utilizes an integrated logic device. It is classified as a logic-FIFOs memory due to its unique ability to operate in both synchronous and asynchronous modes. This type of memory is commonly used in large-scale enterprise systems, such as storage-area networks (SANs) and distributed systems.

The 72265LA10TFG8 operates in both synchronous and asynchronous modes, allowing users to leverage one memory device for both tasks. In synchronous mode, the device is designed to quickly store data in a sequence mode, with each bit of data written into a dedicated area of memory. This type of memory allows for high-speed operation, as data can be stored and retrieved quickly. In asynchronous mode, the device operates similar to a standard memory device, where data can be written and retrieved in any order.

The main advantage of using the 72265LA10TFG8 is its flexibility. By operating in both synchronous and asynchronous modes, it can be used to maximize the performance of enterprise systems. It is also cost-effective, since this type of memory is typically cheaper than comparable DRAM devices. In addition, the device can be programmed to write and/or read data in various formats or with different timing.

The working principle of the 72265LA10TFG8 is based on dynamic random-access memory (DRAM) technology. This type of memory is designed to store electrical charge in a grid of cells. When an address is sent from the processor to the memory, the cells associated with the address are selected and the charge is read or written. This read/write cycle is repeated each time data is accessed from the device. The device also stores multiple rows and columns of memory, which can help increase its overall storage capacity.

The 72265LA10TFG8 finds numerous applications in enterprise systems. For example, it can be used for high-speed caching of disk drives, within SANs or distributed systems. Its flexibility also means that it can be used in various other applications, such as memory expansion, real-time data handling, and analysis. The device is also popular in some robotics applications, where its high-speed operation can be leveraged to improve movements and response times.

In conclusion, the 72265LA10TFG8 is a dynamic random-access memory (DRAM) device which utilizes an integrated logic device. It is classified as a logic-FIFOs memory due to its ability to operate in both synchronous and asynchronous modes. This type of memory offers flexibility, speed, and cost-efficiency, making it a popular choice for enterprise systems and many other applications.

The specific data is subject to PDF, and the above content is for reference

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