75086H Allicdata Electronics
Allicdata Part #:

75086H-ND

Manufacturer Part#:

75086H

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: RF POWER TRANSISTOR
More Detail: RF Transistor
DataSheet: 75086H datasheet75086H Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Part Status: Obsolete
Description

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The 75086H is a bipolar transistor designed for use in RF applications. It is a three-terminal device consisting of two base leads (collector and emitter), and a third lead that serves as the gate. The collector and emitter are used to control the current flow through the device. The transistor is capable of operating at frequencies up to 2MHz and can provide up to 10 watts of power.

The 75086H is designed to be used in a variety of RF applications, including amplifiers, receivers, and oscillators. The transistor is capable of operating at low voltages, making it well-suited for use in battery-powered devices. The three-terminal configuration allows for easy biasing and the ability to adjust the current level without the need for external components. Additionally, the 75086H has low input resistance, making it ideal for use in amplifier applications.

The working principle of the 75086H is based on the operation of a bipolar junction transistor (BJT). A BJT is a semiconductor device in which a current-carrying base is sandwiched between a pair of collector and emitter terminals. The current flowing through the base is controlled by the gate voltage applied to the third terminal. When the base voltage is increased, the collector current increases in direct proportion to the gate voltage. Conversely, when the base voltage is decreased, the collector current decreases in the same way.

When the base and gate voltages are applied to the 75086H, the base-emitter junction acts as a rectifying diode, allowing current to flow between collector and emitter when there is a voltage applied across it. The current is then controlled by the input voltage at the gate terminal, allowing for precise current control. This makes the 75086H ideal for use in amplifier applications and other circuits requiring precise control of current.

In summary, the 75086H is a bipolar transistor designed for RF applications. It is a three-terminal device capable of operating at frequencies up to 2MHz and up to 10 watts of power. It is designed to be used in a variety of applications and provides low input resistance, allowing for precise current control. The working principle of the 75086H is based on the operation of a bipolar junction transistor, which allows current to flow between collector and emitter when a voltage is applied across it and is controlled by the gate voltage. The 75086H is an ideal choice for applications requiring precise current control.

The specific data is subject to PDF, and the above content is for reference

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