75101H Allicdata Electronics
Allicdata Part #:

75101H-ND

Manufacturer Part#:

75101H

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: RF POWER TRANSISTOR
More Detail: RF Transistor
DataSheet: 75101H datasheet75101H Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Part Status: Obsolete
Description

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75101H Application Field and Working PrincipleThe 75101H Bipolar Junction Transistor (BJT) is a high frequency single-stage RF amplifier transistor with a TO-126 package. It is designed for use in extremely high frequency (RF) applications. The 75101H offers low power consumption and low noise figure, making it suitable for a variety of applications, including radio receivers, signal generation and signal amplification.The 75101H is a N-channel Bipolar Junction Transistor (BJT) with a Class B amplifier and an internally matched, low noise transistor. This transistor is commonly used in RF circuits and as an RF pre-amplifier. The transistor features an integrated passive matching network, with a typical gain of 11 dB and a noise figure of 6 dB. It has an output power of up to 0.5 W.As with all other BJTs, the 75101H circuit operates in two modes, cut-off and saturation. In cut-off mode, the transistor is not conducting, the gate-source voltage (Vgs) is zero, the gate-drain voltage (Vgd) is zero, and the drain-source voltage (Vds) is equal to the power supply voltage (Vdd), thus no current is flowing through the transistor.In saturation mode, the transistor is said to be “on”, meaning that its base-emitter junction is forward biased and current is flowing from its source to its drain. In this configuration, the gate-source voltage is higher than the threshold voltage (Vth), the gate-drain voltage is equal to the threshold voltage, and the drain-source voltage is less than the power supply voltage.The 75101H has a range of operating frequencies, from 800 MHz to 2.4 GHz. It is also capable of handling up to +20dBm of power. The transistor also has a maximum gain of 17 dB.The 75101H is a very reliable device and is ideally suited for RF applications in high frequency electronics. It is a great choice for RF pre-amplification, signal amplification, and signal generation. Its excellent gain and low noise figure make it a good choice for a range of applications.The 75101H can be used for many different applications, including car audio systems, cell phones, Radios, Wi-Fi receivers, satellite receivers, and UHF amplifiers. The transistor is also popular in home electronics and industrial electronics applications.The 75101H is one of the most popular Bipolar Junction Transistors (BJT) used in RF applications today. It is an excellent choice for a wide range of high frequency applications, such as signal amplification, signal generation, and pre-amplification. The 75101H is a reliable and reliable device that can handle a wide range of frequencies, providing a low-noise figure and a high gain.

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