80275H

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Bipolar junction transistors (BJT) are widely used for radio frequency (RF) applications. The 80275H is one such device that operates in a multiband radio frequency range. It is an NPN high-performance transistor optimized for RF applications, with features like low gate-source capacitance, low noise figure, low breakdown voltage and high gain.

The 80275H is a common-emitter transistor, with an NPN structure. The emitter is the main component of the device and it is where current flows out. The base is where the control voltage is applied, with its positive being connected to the emitter and its negative being connected to the collector. The collector is where the current leaves the device. The control voltage at the base causes the current to flow from the emitter to the collector, allowing signals generated at the base to be amplified.

The 80275H was designed for use in multiband HF, VHF, and UHF applications where its features are important. It is suitable for radio amateur radio applications such as simplex and duplex radios, for receiver and transmitter applications. It can also be used in other applications where a low-frequency cutoff and low noise performance is required.

The 80275H has several advantages when compared to other transistors in the same class. Its low gate-source capacitance makes it suitable for use in high-frequency circuits, while its low break-down voltage ensures that its performance will not be compromised in high-voltage environments. The low noise figure gives the device an edge over other transistors in terms of signal-to-noise ratio.

The device also has a wide range of recommended operating conditions, making it suitable for applications with varying electrical characteristics. Its maximum collector current is 1.5A and its gain ranges from 50 to 240 depending on collector current and collector-emitter voltage. It is produced in a plastic-cased TO-92 package and rated at a maximum power dissipation of 500mW.

In summary, the 80275H is an effective transistor for multiband radio frequency applications. It has a low gate-source capacitance, low noise figure, and the advantages of the NPN construction. It is suitable for simplex and duplex radio systems, allowing signals generated at the base to be amplified. The wide range of recommended operating conditions and the low breakdown voltage make it suitable for high-voltage environments, as well as ensuring its performance in high-frequency circuits.

The specific data is subject to PDF, and the above content is for reference