8LT009Z35PN

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8LT009Z35PN is a metal-oxide-semiconductor (MOS) silicon-on-insulator (SOI) high voltage power transistor used in various applications including motor control, automotive and industrial equipment, lighting, and power switching. It is designed to be a low on-state voltage drop (VDS) device with an extremely low drain-source on-state resistance (RDSon) and a high operating current capability (Ic) of up to 1100mA.

This wide variety of applications and features make 8LT009Z35PN a versatile device for both commercial and industrial applications. 8LT009Z35PN is suitable for use in power switching, motor control, and other applications where a low on-state voltage drop and high operating current capability is required. It is designed to be a rugged device with a low RDSon for operation in harsh operating environments.

The working principle of 8LT009Z35PN is based on the Gate Electrode Voltage (G-EV)-controlled MOSFET technology. This technology utilizes an insulated gate electrode, and an insulated gate portion, located above the drain region. When a positive voltage is applied to the gate electrode, an electric field is generated between the gate and the drain, which results in the opening of the channel and the formation of a conducting path between the drain and the source. The amount of current that flows through the channel is determined by the voltage applied to the gate electrode.

The device features a maximum drain-source voltage (VDS) of 800V, an on-state resistance (RDSon) of 0.004Ohm, and an operating temperature range from -55°C to 150°C. 8LT009Z35PN also features a low gate charge (Qg) of 30nC, making it particularly suitable for applications requiring high switching speeds.

In summary, 8LT009Z35PN is a versatile metal-oxide-semiconductor silicon-on-insulator high voltage power transistor designed for a wide variety of applications. It features an exceptionally low on-state voltage drop, a high operating current capability, and a range of features for robust performance in harsh operating environments. Its working principle is based on Gate Electrode Voltage controlled MOSFET technology, allowing for precise control of current flow through the device.

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