93AA86CT-I/ST Datasheet/PDFMemory: 93AA86CT-I/ST Application Field and Working Principle
The 93AA86CT-I/ST is a part of a family of serial electrically erasable programmable memory devices, each of which consists of a flash memory module, volatile SRAM and an on-chip controller and I/O interface. These integrated circuits are mainly used for information storage, data and software management and communication interface.
The 93AA86CT-I/ST is organized as 8K× 8 bits of non-volatile memory, capable of storing 8 kilobytes of user data. It provides a wide operating temperature range (-40℃ to +125℃) and support byte-wide or page-wide write operations. It comes with an automatic hardware write protection and write protection options. It has both a self-timed and parallel write-cycle with program and erase commands.
The 93AA86CT-I/ST memory is an EEPROM which stands for electrically erasable programmable read-only memory. It is a type of non-volatile memory used in electronic devices to store data that can be read and written to. EEPROMs are a type of flash memory, meaning the data stored in the memory is non-volatile and can be saved even when the power is turned off. EEPROMs are used in consumer electronics such as televisions and game consoles, as well as in automotive technology.
In addition to its non-volatile capability, another advantage of EEPROMs is their low power consumption. This type of memory does not require a constant power source to retain information, meaning that it can be used in a variety of low power applications. EEPROMs are also relatively simple to program and are cost effective, making them ideal for applications in both consumer and industrial markets.
Working Principle
The 93AA86CT-I/ST can be used to store user data and firmware. It consists of an 8K× 8 bits non-volatile memory array. In order to store data in the array, the user must provide a program command to the on-chip controller.
The controller then triggers a self-timed write cycle that consists of three steps: verify, program and erase. During the program phase, data is written to a single byte in the memory array. During the erase phase, all bytes in the memory array are erased in order to make the area available for writing new data.
The 93AA86CT-I/ST also has a parallel write cycle. In this type of write cycle, the user can program multiple bytes in the memory array simultaneously. The write cycle is triggered by the user providing a program or erase command.
Once the data is programmed, the 93AA86CT-I/ST can be read using a serial interface. The interface is capable of transferring 8 bits of data at a time. The data can then be retrieved from the memory array and interpreted by the user.
Conclusion
The 93AA86CT-I/ST is an ideal choice for applications that require a low-power, non-volatile memory solution. It is an EEPROM device that offers a wide operating temperature range and can be programmed with either self-timed or parallel write cycles. It is also an effective solution for data and software management and wireless communication applications. It is cost effective, easy to use and can be used in a variety of applications.