93C66AT-I/MC

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The 93C66AT-I/MC is a low-cost serial FRAM device designed specifically for industrial applications. This device is an advanced memory technology that combines the non-volatile, low-cost characteristics of FRAM (Ferroelectric RAM) memory with a serial communication interface. It is a non-volatile memory device that can retain data even when the power is off, making it ideal for industrial applications where data retention is required. The 93C66AT-I/MC is available in various densities, from 2kb to 128kb. It offers a high read/write speed of up to 8MHz and is very low power, with a typical operating current of only 5mA.

The 93C66AT-I/MC is ideal for industrial applications such as data logging, particularly where the data needs to be retained for long periods of time with limited or no power source. It can also be used in automotive, industrial control, and embedded systems applications. It features a synchronous serial input/output expansion bus which allows it to be easily accessed over standard buses such as I2C, SPI, and Microwire.

The 93C66AT-I/MC working principle is based on FRAM (Ferroelectric RAM). This technology uses a ferroelectric material to store data and is non-volatile, meaning data is retained even when the power is off. It also has fast read and write speeds, as well as low power consumption. The 93C66AT-I/MC includes an onboard register that stores up to 128 address bits, allowing for access to specific memory locations. This register is accessed through the serial port and can be used to read or write data.

Overall, the 93C66AT-I/MC is a highly reliable and low-power memory device, designed specifically for the industrial market. It is ideal for applications where data retention is required, such as in data logging, automotive, and embedded systems. The device is fast and easy to access over standard buses, such as I2C, SPI, and Microwire, as well as having a wide range of densities. It is also highly reliable, with a long operating life, low power consumption and excellent data retention properties.

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