Allicdata Part #: | 99326-E0496-B-ND |
Manufacturer Part#: |
99326-E0496-B |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Cypress Semiconductor Corp |
Short Description: | IC FLASH NOR |
More Detail: | Memory IC |
DataSheet: | 99326-E0496-B Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | * |
Part Status: | Obsolete |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
99326-E0496-B is a type of memory which is widely used for purposes such as data storage and buffer memory. It has a wide application field, from embedded applications to industrial/automation systems. In addition, it is often used in PC mainboards to enhance system performance, particularly in gaming and graphic applications.
Technologically speaking, 99326-E0496-B is a non-volatile memory type that can maintain its stored data even when the power is switched off. It is built using ‘multi-level cell’ (MLC) technology which allows it to store data at multiple different levels. This is different from Single Level Cell (SLC) memory which only stores information at one level, making it less space-efficient since it requires a larger amount of cells in order to store the same amount of data.
99326-E0496-B has a number of features which make it ideal for a wide range of applications. Firstly, its high read/write speed lowers latency and improves system performance. This makes it an ideal choice for applications where speed is important such as gaming and graphics. Secondly, its built-in error-correcting code (ECC) and advanced sensing features help to keep data secure and accurate. Lastly, its power-refreshing mechanism helps to prolong the life of the memory. All of these features make 99326-E0496-B an attractive choice for a wide range of applications.
The working principle of 99326-E0496-B is based on the principle of magnetism. This type of memory uses magnetic layers to store data in the form of magnetic fields. A metal oxide is used as a recording material and is placed between two metal plates to form a sandwich-like structure. When a voltage is applied to the metal oxide, it creates a magnetic field which is recorded onto the metal oxide layer. When the memory is read, the recorded magnetic fields induce a tiny current which is detected and interpreted by the memory controller.
The combination of these advanced technologies and features make 99326-E0496-B an ideal choice for a wide range of applications. Its high read/write speed and error-correcting capabilities make it an ideal choice for applications where data security and performance are important. In addition, its power-refreshing mechanism helps to prolong the life of the memory, making it suitable for use in long-term storage applications.
Overall, 99326-E0496-B is a versatile type of memory which is ideal for a wide range of applications. Its combination of advanced technologies, features and working principle make it an attractive choice for any application where data security and performance are key requirements.
The specific data is subject to PDF, and the above content is for reference
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