A1P25S12M3-F

Series:	--
Part Status:	Active
IGBT Type:	Trench Field Stop
Configuration:	Three Phase Inverter
Voltage - Collector Emitter Breakdown (Max):	1200V
Current - Collector (Ic) (Max):	25A
Power - Max:	197W
Vce(on) (Max) @ Vge, Ic:	2.45V @ 15V, 25A
Current - Collector Cutoff (Max):	100µA
Input Capacitance (Cies) @ Vce:	1550pF @ 25V
Input:	Standard
NTC Thermistor:	Yes
Operating Temperature:	-40°C ~ 150°C (TJ)
Mounting Type:	Chassis Mount
Package / Case:	Module
Supplier Device Package:	ACEPACK™ 1

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Introduction

The A1P25S12M3-F IGBT module is a state-of-the-art power semiconductor switch developed to handle high power applications. It combines the advantages of both a high voltage insulated gate bipolar transistor (IGBT) and a passive diode, creating a compact and cost-efficient power semiconductor device. This module is perfect for high-voltage and high-current DC and AC power control applications.

IGBT Module Characteristics

The A1P25S12M3-F IGBT module is suitable for applications ranging from consumer electronics and power supplies to high-frequency switching and telecom power systems. It features a soft turn-off design to minimize dv/dt stress on the IGBT, allowing for reliable switching operations. At a maximum rating of 850V, the A1P25S12M3-F can handle high-power switching applications up to 400A of continuous current. The presence of a reverse-blocking diode also ensures rapid turn-off of the internal IGBT, providing improved power efficiency and fast switching times.

A1P25S12M3-F Application Field and Working Principle

The A1P25S12M3-F IGBT module is suited for a wide range of applications where power needs to be switched on and off quickly and precisely. Common applications include solar inverters, UPS systems, motor control, welding machines, and other high-transient switching applications. It can also be utilized in applications requiring high voltage and current control such as lighting, induction heating, or power supplies. The A1P25S12M3-F IGBT module is characterized by its high switching frequency, low loss, and high efficiency.The working principle of the A1P25S12M3-F IGBT module employs the principles of an insulated gate bipolar transistor (IGBT). The IGBT combines elements of a traditional transistor and a diode, allowing for an efficient and flexible voltage-controlled switch. The IGBT is essentially an I-type metal-oxide-semiconductor field-effect transistor (MOSFET) combined with a reverse-blocking diode. The resulting composite device can be used to switch high voltage and current levels quickly and accurately, making it ideal for a variety of applications.At a fundamental operational level, the A1P25S12M3-F IGBT module works by first creating an energy barrier between the MOSFET gate and the other semiconductor elements within the device. Once this barrier is in place, a voltage can be applied to the gate of the MOSFET to increase its conductivity. This controlled gate enables the IGBT to switch high power levels rapidly and accurately.The reverse-blocking diode aids in the efficient and rapid operation of the device by assisting the IGBT in quickly turning off the power it is switching. When no voltage is applied to the gate, the diode will assume a high blocking voltage, hence preventing current from flowing in the reverse direction. This reduces the amount of time it takes for the device to turn off, thus improving power efficiency and ensuring fast switching times.

Conclusion

The A1P25S12M3-F IGBT module is a cutting edge piece of power semiconductor technology that delivers fast, efficient, and reliable high-voltage and high-current switching capabilities. It is the ideal solution for applications ranging from motor control to welding machines and UPS systems. The presence of a reverse-blocking diode and soft turn-off design ensure maximum power savings and fast switching times. With its high-switching frequency and low loss capabilities, the A1P25S12M3-F is the perfect way to accurately and precisely control power in high-transient switching applications.

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