| Allicdata Part #: | 497-17756-ND |
| Manufacturer Part#: |
A2C35S12M3 |
| Price: | $ 37.46 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | STMicroelectronics |
| Short Description: | IGBT TRENCH 1200V 35A ACEPACK2 |
| More Detail: | IGBT Module Trench Field Stop Three Phase Inverter... |
| DataSheet: |  A2C35S12M3 Datasheet/PDF |
| Quantity: | 4 |
| 1 +: | $ 34.05150 |
| 10 +: | $ 31.99010 |
| 100 +: | $ 28.68800 |
Specifications
| Series: | -- |
| Part Status: | Active |
| IGBT Type: | Trench Field Stop |
| Configuration: | Three Phase Inverter with Brake |
| Voltage - Collector Emitter Breakdown (Max): | 1200V |
| Current - Collector (Ic) (Max): | 35A |
| Power - Max: | 250W |
| Vce(on) (Max) @ Vge, Ic: | 2.45V @ 15V, 35A |
| Current - Collector Cutoff (Max): | 100µA |
| Input Capacitance (Cies) @ Vce: | 2154pF @ 25V |
| Input: | Three Phase Bridge Rectifier |
| NTC Thermistor: | Yes |
| Operating Temperature: | -40°C ~ 150°C (TJ) |
| Mounting Type: | Chassis Mount |
| Package / Case: | Module |
| Supplier Device Package: | ACEPACK™ 2 |
Description
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The A2C35S12M3 module is a type of insulated gate bipolar transistor (IGBT). It is a three terminal power semiconductor device used to switch electrical power. In this article, the application field and working principle of A2C35S12M3 module will be discussed.
Application Field
The application field of the A2C35S12M3 module covers a wide range of areas, from automotive applications to home and industrial applications. In automotive applications, this module is mainly used for motor control, traction control, and power supply systems. In home and industrial applications, this module has broad application in AC motor drives, inverters, motor starters, welding machines and uninterruptible power supplies.Working Principle
The A2C35S12M3 module works in the same way as standard IGBTs, but with a few additional features. An insulated gate bipolar transistor is a combination of two transistors: an n-channel MOSFET power transistor and a bipolar transistor. The control signal applied to the gate terminal of the module controls the operation of the device. When the gate terminal is taken to a positive potential, holes in the n-channel MOSFET are attracted to the gate terminal, forming a channel. The channel is a low-resistance path between the drain and source terminals, through which the current flows. The current flowing through the channel is limited by the maximum allowable value of the module.When the gate terminal is taken to a negative potential, the channel is inhibited and the current flow is interrupted. The bipolar transistor also plays its role in the operation of the module, providing an alternate path for the current when the channel of the MOSFET is blocked.Conclusion
The A2C35S12M3 module is a three terminal power semiconductor device used to switch electrical power. It is used in a wide range of applications such as automotive and home applications, to industrial applications like AC motor drives and welding machines. The module works in the same way as standard IGBTs, but with a few additional features. The control signal applied to the gate terminal of the module controls the operation of the device.The specific data is subject to PDF, and the above content is for reference
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