
Allicdata Part #: | 497-17744-ND |
Manufacturer Part#: |
A2P75S12M3 |
Price: | $ 44.07 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | IGBT TRENCH 1200V 75A ACEPACK2 |
More Detail: | IGBT Module Trench Field Stop Three Phase Inverter... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | $ 40.05540 |
10 +: | $ 37.62930 |
Series: | -- |
Part Status: | Active |
IGBT Type: | Trench Field Stop |
Configuration: | Three Phase Inverter |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Current - Collector (Ic) (Max): | 75A |
Power - Max: | 454.5W |
Vce(on) (Max) @ Vge, Ic: | 2.3V @ 15V, 75A |
Current - Collector Cutoff (Max): | 100µA |
Input Capacitance (Cies) @ Vce: | 4700pF @ 25V |
Input: | Standard |
NTC Thermistor: | Yes |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | ACEPACK™ 2 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The A2P75S12M3 is a high-power industrial grade insulated gate bipolar transistor (IGBT) module. It is one of the many IGBT modules that offer high switching speeds, low on-state conduction losses, and low gate drive power requirements. These features make the A2P75S12M3 an ideal choice for many industrial applications.
An IGBT is a type of power semiconductor device that is widely used in power electronics applications. It is a three-terminal device composed of two insulated gate field-effect transistors (IGFETs) and one bipolar transistor. The IGFETs act as the switching element and the bipolar transistor is the active element, allowing IGBTs to control larger currents than normal MOSFETs. This makes IGBTs ideal for high current applications.
The A2P75S12M3 is a high-power IGBT module with an output current rating of up to 75A and a voltage rating of 1200V DC. It also supports a switching frequency of up to 6kHz and has a low conduction loss of 1.7mΩ. In addition, the module is designed with high-temperature and fault-tolerant features, making it suitable for a variety of industrial applications.
The working principle of the A2P75S12M3 module is quite simple. When the gate voltage is positive, a conducting channel is established between the emitter and collector of the IGBT. The presence of this conducting channel allows current to flow. As current passes through the IGBT, it will produce a voltage drop and the associated power will be dissipated as heat. This process can be repeated at a high frequency, resulting in high switching speeds and improved efficiency.
The A2P75S12M3 can be used in a variety of industrial applications such as industrial motor drives, inverters, UPS systems, welding machines, and power supplies. It can also be used in high-power applications such as electric vehicles, solar inverters, and welding transformers.
In conclusion, the A2P75S12M3 is a high-power IGBT module that offers high switching speed, low on-state conduction loss, and high temperature and fault tolerant features. It is suitable for a variety of industrial applications, including electric vehicle and solar inverter applications. The module operates on the principle that when the gate voltage is applied, a conducting channel is established between the emitter and collector, allowing current to flow, resulting in a voltage drop and associated power loss as heat.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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