A4F08QD8BNPBSE Memory Cards, Modules |
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Allicdata Part #: | A4F08QD8BNPBSE-ND |
Manufacturer Part#: |
A4F08QD8BNPBSE |
Price: | $ 107.07 |
Product Category: | Memory Cards, Modules |
Manufacturer: | ATP Electronics, Inc. |
Short Description: | MODULE DDR 4 SDRAM 8GB 260SODIMM |
More Detail: | Memory Module DDR4 SDRAM 8GB 2133MT/s 260-SODIMM |
DataSheet: | A4F08QD8BNPBSE Datasheet/PDF |
Quantity: | 3 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
1 +: | $ 97.33500 |
10 +: | $ 94.09050 |
25 +: | $ 87.60150 |
50 +: | $ 86.30370 |
Specifications
Series: | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Memory Type: | DDR4 SDRAM |
Moisture Sensitivity Level (MSL): | -- |
Memory Size: | 8GB |
Speed: | 2133MT/s |
Package / Case: | 260-SODIMM |
Description
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A4F08QD8BNPBSE devices are dynamic random access memory (DRAM) modules designed for a wide range of applications requiring higher performance and higher density. This type of DRAM utilizes a parallel structure to increase the capacity and expand the application range. The purpose of this document is to provide a brief overview of the A4F08QD8BNPBSE application field and working principle.A4F08QD8BNPBSE is used in a variety of applications including, but not limited to, enterprise servers, high-performance computing (HPC) systems, multimedia designs, gaming systems, and automated test equipment. It is characterized by low power consumption, excellent performance, high reliability, and high scalability.A4F08QD8BNPBSE works on a parallel structure, wherein the data and addresses are processed in parallel. The A4F08QD8BNPBSE device consists of an array of DRAM cells which is organized in a two-dimensional pattern. This array is separated into two banks; each bank contains eight rows and eight columns of cells. Each bank can be independently accessed.The A4F08QD8BNPBSE module has two distinct devices; the first is the control logic circuit which is used to control the module’s operations. This includes control signals for data fetching and writing to and from each DRAM cell. The second device is the DRAM cell array. Each DRAM cell consists of two capacitors and an access transistor. It stores data in the form of two voltages that represent the ‘0’ and the ‘1’ bits. In order to read data from the DRAM cells, the A4F08QD8BNPBSE module generates a signal called “Row Address Select” or RAS. This signal is used to identify the array row which contains the desired data. The corresponding row is activated by the RAS signal and the data is read out from each DRAM cell. The A4F08QD8BNPBSE module is a high-speed device that can access data with lower latency and higher bandwidth than conventional DRAMs. This makes it ideally suited for applications where data processing performance is essential. Moreover, it has better scalability and reliability due to its ability to operate in parity and interleaving modes. Overall, the A4F08QD8BNPBSE module is a powerful and efficient memory module designed for the modern computing world. It offers superior performance, scalability, reliability, and power efficiency, making it ideal for a variety of applications ranging from enterprise servers to gaming systems.
The specific data is subject to PDF, and the above content is for reference
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