Allicdata Part #: | ADTA114EUAQ-13-ND |
Manufacturer Part#: |
ADTA114EUAQ-13 |
Price: | $ 0.02 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | PREBIAS TRANSISTOR SOT323 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | ADTA114EUAQ-13 Datasheet/PDF |
Quantity: | 1000 |
10000 +: | $ 0.01982 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | PNP - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 10 kOhms |
Resistor - Emitter Base (R2): | 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | -- |
Vce Saturation (Max) @ Ib, Ic: | -- |
Current - Collector Cutoff (Max): | -- |
Frequency - Transition: | 250MHz |
Power - Max: | 330mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-70, SOT-323 |
Supplier Device Package: | SOT-323 |
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The ADTA114EUAQ-13 is a single, pre-biased, bipolar junction transistor (BJT) of the NPN type. This type of transistor is one of the most commonly used transistors in electronic circuits due to its superior characteristics.
The ADTA114EUAQ-13 features a wide range of use-cases due to its versatile electrical characteristics. For example, it is well suited for applications such as amplifiers, analog switching, logic systems, and power supplies. Furthermore, its excellent gain, low saturation voltage, and low leakage make it an ideal choice for a wide range of applications.
The ADTA114EUAQ-13 utilizes the basic working principles of a bipolar junction transistor. A typical BJT consists of two regions, the emitter region and the collector region. The emitter region is a heavily doped region that provides majority carriers, while the collector region is a lightly doped region that acts as a sink for majority carriers. The base region is an intrinsic region that controls the current flow between the emitter and collector regions.
In operation, using the base-emitter junction, minority carriers can be injected into the emitter-base depletion region, thereby allowing current to flow. Then, when the base-collector junction becomes conductive, a majority of carriers that have passed through the base region are collected in the collector region. This is known as the “Collector–to–Emitter” current flow, or “Corresponding Modes”.
When the ADTA114EUAQ-13 is “On,” the collector-base junction is reverse biased, enabling a minimum value of base current to flow. This allows for the current to flow through the base-collector junction and thereby transfer majority carriers into the collector region. As a result, the Collector-to-Emitter current is increased, allowing more current to flow through the collector-emitter junction.
The ADTA114EUAQ-13 transistor has excellent voltage and current sharing characteristics, making it an ideal choice for various applications. It is also relatively easy to use and is often used in consumer audio, automotive, and telecommunications systems. The ADTA114EUAQ-13 is also compatible with various common integrated circuits and is designed to meet a wide range of voltage and current requirements.
In conclusion, the ADTA114EUAQ-13 is a versatile, single, pre-biased, bipolar junction transistor (BJT) of the NPN type. Its excellent gain, low saturation voltage, and low leakage make it an ideal choice for a wide range of applications. It is also relatively easy to use and is often used in consumer audio, automotive, and telecommunications systems. Lastly, the voltage and current sharing characteristics of this transistor make it ideal for use in different circuits.
The specific data is subject to PDF, and the above content is for reference
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