AIKQ120N60CTXKSA1

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The AIKQ120N60CTXKSA1 is a part of the IGBT Single Transistor family. It is an insulated gate bipolar transistor (IGBT) designed specifically to provide a high-speed switching solution in a wide range of applications. The AIKQ120N60CTXKSA1 combines the advantages of a low on-state voltage drop, low gate charge and fast switching speeds, making it an ideal solution for high-power and high-speed switching applications.

The AIKQ120N60CTXKSA1 is designed to operate in a wide range of operating voltages and temperatures. It has a maximum collector-emitter voltage of 1200V and a maximum rise time of 20ns. It can handle currents up to 60A and can operate up to a maximum temperature of 175°C. The AIKQ120N60CTXKSA1 is also a high-performance device, offering a peak repetition rate of 8kHz and a maximum total power dissipation of 240W.

The AIKQ120N60CTXKSA1 is an N-channel capacitor-coupled IGBT device. The device consists of an N-channel IGBT and a Zener diode in series. A charge is stored on the capacitor at the gate of the IGBT. When a low voltage is applied to the gate, the charge on the capacitor will leak off and turn on the IGBT. In this way, the IGBT is switched on when the gate voltage is low. The N-channel IGBT allows the current to flow between collector and emitter when it is turned on and is blocked otherwise. The Zener diode in series with the IGBT ensures that the IGBT can not turn on in high-voltage transients.

The AIKQ120N60CTXKSA1 can be used in a wide variety of applications including power electronics, motor drives, and general power switching applications. Additionally, the AIKQ120N60CTXKSA1\'s fast switching speeds and low gate charge make them especially attractive for use in high-power and high-frequency applications such as high-speed DC-DC converters and high-density power supplies.

In summary, the AIKQ120N60CTXKSA1 IGBT single transistor is a high-performance, fast switching device designed for high-power and high-speed switching applications. It is designed to handle currents up to 60A and operate in a wide range of temperatures and voltages. Its low on-state voltage drop, low gate charge, and fast switching speeds make it an ideal solution for high-power and high-speed switching applications.

The specific data is subject to PDF, and the above content is for reference