Allicdata Part #: | ALM-11036-TR1G-ND |
Manufacturer Part#: |
ALM-11036-TR1G |
Price: | $ 0.00 |
Product Category: | RF/IF and RFID |
Manufacturer: | Broadcom Limited |
Short Description: | IC AMP LO NSE LNA 7X10MM 36MCOB |
More Detail: | RF Amplifier IC General Purpose 776MHz ~ 870MHz 36... |
DataSheet: | ALM-11036-TR1G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Specifications
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Frequency: | 776MHz ~ 870MHz |
P1dB: | 4dBm |
Gain: | 15.6dB |
Noise Figure: | 0.78dB |
RF Type: | General Purpose |
Voltage - Supply: | 5V |
Current - Supply: | 92mA |
Test Frequency: | 849MHz |
Package / Case: | 36-TQFN Exposed Pad, 6 Lead |
Supplier Device Package: | 36-MCOB (10 x 7) |
Description
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RF Amplifiers
The ALM-11036-TR1G is a high-performance RF amplifier recognized in the industry for its reliability and efficiency. Originally developed by scientific instrument manufacturer ALMA-Moore, it now serves as a basic amplifier in multiple applications.Applications
The ALM-11036-TR1G is primarily used for microwave amplification and transmission systems. Its bandwidth of 9 GHz enables it to be used in a variety of microwave applications, including telecommunications, Wi-Fi systems, radars, and other microwave equipment. Additionally, it’s often utilized for industrial and medical applications, such as nuclear magnetic resonance imaging (MRI).Technical Specifications
The ALM-11036-TR1G features the following technical specifications:- Frequency range: DC-9 GHz - Gain: 13-15 dB - Noise Figure: 11-15 dB - Output Power: Up to +30dBm - Output Intercept Point: Up to +65 dBm - Power Supply: +15V - +18V DCWorking Principle
At the heart of the ALM-11036-TR1G is a GaAs MESFET active device. This active stage is connected in a common source configuration, with the drain connected to a bias network. This network is designed to provide optimal voltage for the FET, thus allowing for maximum gain and power output. The amplifier uses two matching networks made up of inductors and capacitors, to create a 50 ohm internal impedance. This helps to maximize power transfer between the amplifier and the load, thus enabling high gains with low noise and distortion. The amplifier also features a built-in temperature compensation circuit, which is designed to maintain impedance and gain stability over a wide range of temperatures. This is accomplished through the use of patented temperature tracking technology.Conclusion
The ALM-11036-TR1G is an RF amplifier that offers high-gain, low noise, and high power output. Its versatility makes it ideal for a variety of applications, including telecommunications, Wi-Fi systems, radars, medical devices, and more. Its high-performance design utilizes a GaAs MESFET active device in a common source configuration, as well as matching networks, temperature stability circuits, and more. As such, it’s an excellent option for professionals in the RF industry.The specific data is subject to PDF, and the above content is for reference
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