ALM-1222-TR1G Allicdata Electronics
Allicdata Part #:

ALM-1222-TR1G-ND

Manufacturer Part#:

ALM-1222-TR1G

Price: $ 0.00
Product Category:

RF/IF and RFID

Manufacturer: Broadcom Limited
Short Description: IC AMP VERY LO NOISE 5X6MM 22LD
More Detail: RF Amplifier IC Cellular, CDMA, W-CDMA, PCS, EGSM ...
DataSheet: ALM-1222-TR1G datasheetALM-1222-TR1G Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Frequency: 1.8GHz ~ 2.2GHz
P1dB: 27.5dBm
Gain: 29.5dB ~ 32.5dB
Noise Figure: 0.62dB
RF Type: Cellular, CDMA, W-CDMA, PCS, EGSM
Voltage - Supply: 1.9 V ~ 2.8 V
Current - Supply: 280mA
Test Frequency: 2GHz
Package / Case: 22-SMD Module, No Lead
Supplier Device Package: 22-MCOB (5x6)
Description

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RF amplifiers are components designed to amplify radio frequency (RF) signals. They are used for applications requiring significant levels of signal gain but with minimal distortion. A common type of RF amplifier is the ALM-1222-TR1G, which is designed for high power RF applications. This article describes the application field and working principle of the ALM-1222-TR1G.

The ALM-1222-TR1G is ideal for applications needing a high power RF amplifier with output power up to 12 Watts and a frequency range of 690 MHz to 870 MHz. These devices are specifically designed for high power commercial and military applications such as high-power communications links, RF transmitters, radar systems, and satellite communications systems. The ALM-1222-TR1G also offers a high linearity of up to 60 dB with a carrier-to-intermodulation ratio of greater than 40 dB.

The working principle of the ALM-1222-TR1G is based on the gallium arsenide (GaAs) heterojunction bipolar transistor (HBT). The device is equipped with an HBT in a matching circuit, followed by an integrated collector inductor. The output stage further consists of a power amplifier that makes use of gallium nitride (GaN) technology. The HBT provides excellent linearity, gain stability and isolation from spurious responses, while the GaN power amplifier provides the necessary power and efficiency.

The ALM-1222-TR1G is designed with a built-in protection circuit that is designed to protect the amplifier from surge currents, reverse currents and over current. The amplifier also features temperature protection and short-circuit protection. In addition, the device features over-voltage protection and RF bias current adjustment. This ensures that the amplifier is safe and reliable during operation.

The ALM-1222-TR1G can be used in a wide variety of applications requiring high power and linearity. These devices are suitable for military and commercial applications that require a reliable RF power amplifier with high gain and linearity. The device is also suitable for use in applications such as high power amplifiers for communication systems, microwave backhauls, and point-to-point links. The ALM-1222-TR1G is also suitable for use in IoT and CATV applications.

In conclusion, the ALM-1222-TR1G is a high power RF amplifier with linearity and gain stability for applications requiring high power. The device is equipped with protection circuits, temperature protection, and bias current adjustment for enhanced reliability and safety. The device is optimal for applications such as communication systems, microwave backhauls, point-to-point links, and IoT/CATV. This makes it suitable for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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