ALM-1322-TR1G

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RF amplifiers are active electronic components that are used to increase the power of a radio frequency (RF) signal while maintaining a relatively constant signal level regardless of the impedance of the load. ALM-1322-TR1G amplifiers are designed specifically to provide high gain, low noise, and low distortion in the RF frequency range (20-1000MHz). The module is designed for application in amplifiers and bidirectional amplifiers.

Features of ALM-1322-TR1G

• High Gain (25dB typ.)
• Low Noise (1.5dB typ.)
• Low DC Power Consumption (10mA typ.)
• Wideband Impedance Matching (100 Ω-1000 Ω)
• Protected against RF Damage

Applications

• Wireless Communication Systems
• Radar Systems
• Electronic Measurements
• Automotive Electronics
• Consumer Electronics

Working Principle

ALM-1322-TR1G amplifiers are designed with a MOSFET (metal-oxide-semiconductor field effect transistor) to ensure high gains, low noise, and low distortion while drawing low levels of DC power consumption.

The MOSFET works in a common-source configuration to amplify RF signals by increasing the amplitude of a signal while preserving its shape and wave characteristics. The MOSFET is biased with DC source, so that the input signal lies within the re-generation range of the MOSFET. Further, the amplifier is protected against RF damage and wideband impedance matching (100 Ω-1000 Ω).

The amplifier also features input/output impedance matching circuits with high isolation, which reduces the amount of unwanted noise generated by the amplifier. This allows for maximum signal-to-noise ratio of the amplified signal.

The amplifier is further protected by an efficient thermal design with an internal heat sink to reduce thermal runaway.

In summary, the ALM-1322-TR1G is a high-performance RF amplifier designed for applications in amplifiers and bidirectional amplifiers that need high gains, low noise, and low distortion, while drawing low levels of DC power consumption.

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