AMF-3B-02001800-60-30P

Series:	--
Part Status:	Active
Frequency:	2GHz ~ 18GHz
P1dB:	30dBm
Gain:	35dB
Noise Figure:	4dB
RF Type:	General Purpose
Voltage - Supply:	12 V ~ 15 V
Current - Supply:	1.8A
Test Frequency:	--
Package / Case:	Module, SMA Connectors
Supplier Device Package:	Module

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Introduction: RF Amplifiers

RF amplifiers are integral components of many electronic devices. They provide a means to amplify low-level signals to higher levels, giving a wider range of applications and end objectives. RF amplifiers are most commonly used to provide a signal boost to various components of the radio frequency system, making it possible for components of the system to produce low-level signals for further amplification.

AMF-3B-02001800-60-30P application field and working principle

The AMF-3B-02001800-60-30P is a high-performance multi-state power amplifier designed for the radio frequency (RF) environment. It is capable of delivering a maximum of 60 watts of saturated power across a frequency range of 1800 MHz. The AMF-3B-02001800-60-30P offers superior small signal and power handling capabilities, making it ideal for use in a variety of RF application fields, such as satellite communication, mobile communication, wireless LAN and internal/external communication systems.The AMF-3B-02001800-60-30P mainly consists of a bipolar junction transistor (BJT) amplifier chain, a high-Q multi-turn inductor-capacitor (LC) network, and an emitter follower circuit. It is composed of two arms, the BJT amplifier chain and the emitter follower circuit, which are connected together in a switched-mode configuration. This allows for a very wide dynamic range of operation, with the BJT amplifier chain providing signal gain, while the emitter follower circuit controlling current gain over a wide range of frequencies. The BJT amplifier chain works by amplifying a relatively small input signal to a relatively large output signal. This is done through a chain of transistors connected in cascade configuration and bias lines, which are arranged such that the signal current is amplified at each stage. The combination of the input and output transistors allow the device to have variable gain when desired. The high-Q LC network works to provide the necessary frequency selective abilities to the device. The LC network serves two purposes. First, it works to filter out any undesired frequencies that would otherwise decrease the performance of the device. Second, it functions to provide an impedance matching between the input and output stages, allowing the amplifier to deliver power levels at the highest efficiency. The emitter follower circuit improves linearity by providing a low output impedance. This allows greater control over the current gain, which is necessary for stable operation of the device across the frequency range. Additionally, the emitter follower reduces distortion, thus ensuring that the device is capable of delivering its maximum power efficiency across the frequency range.

Conclusion

The AMF-3B-02001800-60-30P is a powerful and efficient RF amplifier designed to meet the demands of a wide range of RF applications. Its design enables it to provide a wide dynamic range of operation, as well as superior small signal and power handling capabilities. Its combination of the BJT amplifier chain and the LC network provide superior frequency selectivity power delivery, while the emitter follower circuit provides better linearity and decreased distortion.

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