Allicdata Part #: | 785-1760-ND |
Manufacturer Part#: |
AOKS40B65H1 |
Price: | $ 2.37 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | IGBT 650V 40A TO247 |
More Detail: | IGBT 650V 80A 300W Through Hole TO-247 |
DataSheet: | AOKS40B65H1 Datasheet/PDF |
Quantity: | 234 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
1 +: | $ 2.14830 |
10 +: | $ 1.91835 |
25 +: | $ 1.72645 |
100 +: | $ 1.57305 |
250 +: | $ 1.41959 |
500 +: | $ 1.27378 |
1000 +: | $ 1.07428 |
2500 +: | $ 1.02312 |
Series: | Alpha IGBT™ |
Packaging: | Tube |
Lead Free Status / RoHS Status: | -- |
Part Status: | Active |
Moisture Sensitivity Level (MSL): | -- |
IGBT Type: | -- |
Voltage - Collector Emitter Breakdown (Max): | 650V |
Current - Collector (Ic) (Max): | 80A |
Current - Collector Pulsed (Icm): | 120A |
Vce(on) (Max) @ Vge, Ic: | 2.4V @ 15V, 40A |
Power - Max: | 300W |
Switching Energy: | 1.27mJ (on), 460µJ (off) |
Input Type: | Standard |
Gate Charge: | 63nC |
Td (on/off) @ 25°C: | 41ns/130ns |
Test Condition: | 400V, 40A, 7.5 Ohm, 15V |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-247-3 |
Supplier Device Package: | TO-247 |
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The AOKS40B65H1 is a type of insulated gate bipolar transistor (IGBT) that is designed for single-pole applications. IGBTs are a type of transistor that combines the properties of both bipolar transistors and field-effect transistors. This type of component has a highly variable current carrying capacity and operates on a low voltage. The AOKS40B65H1 is a top-of-the-range component and is used in a variety of industrial and commercial applications.
An IGBT works by using two insulator materials to provide both the blocking and switching functions. The insulator materials, known as the gate dielectric and the source dielectric, allow for current to flow between the source and the drain, with the control of the gate voltage. The IGBT is composed of two doped semiconductors, the N-type, which is the source and the P-type, which is the drain. By controlling the gate voltage, the current pathway between these two semiconductors can be controlled. The amount of current flowing through the device and the amount of power that can be dissipated can also be controlled by varying the gate voltage.
The AOKS40B65H1 is designed to operate at a maximum operating temperature of 150°C, with a nominal operating voltage of 650V. It has a low on-state voltage drop and a high current-handling capacity. This makes it an ideal choice for motor control and switching applications, as well as power factor correction. Other applications include transformerless AC and DC power supplies, UPS systems, and high-power lighting systems. It is also used in applications that require fast switching, such as solar inverters.
The AOKS40B65H1 has a maximum current carrying capacity of 40A and is capable of handling large power applications with a maximum power dissipation of 40A x 650V, or 2600W. It also features a fast switching speed and low switching losses to increase the efficiency of the overall system. It is easy to mount and can be used in high-vibration environments due to its robust construction.
The AOKS40B65H1 is a reliable, high-performance IGBT that is designed for single pole applications. Its low on-state voltage drop, high current-handling capacity, and fast switching speed make it suitable for a variety of applications. Its rugged construction also means that it has a long life, making it a cost-effective solution for motor control and switching applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
AOKS40B65H1 | Alpha & ... | 2.37 $ | 234 | IGBT 650V 40A TO247IGBT ... |
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