Allicdata Part #: | 754-2210-2-ND |
Manufacturer Part#: |
AP2012P3C-P22 |
Price: | $ 0.06 |
Product Category: | Sensors, Transducers |
Manufacturer: | Kingbright |
Short Description: | 2.0X1.2MM PHOTOTRANSISTOR SMD LE |
More Detail: | Phototransistor 940nm Top View 0805 (2012 Metric) |
DataSheet: | AP2012P3C-P22 Datasheet/PDF |
Quantity: | 2000 |
2000 +: | $ 0.05897 |
6000 +: | $ 0.05569 |
10000 +: | $ 0.05078 |
50000 +: | $ 0.04357 |
100000 +: | $ 0.04177 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Voltage - Collector Emitter Breakdown (Max): | 30V |
Current - Dark (Id) (Max): | 100nA |
Wavelength: | 940nm |
Viewing Angle: | 160° |
Power - Max: | 100mW |
Mounting Type: | Surface Mount |
Orientation: | Top View |
Operating Temperature: | -40°C ~ 85°C |
Package / Case: | 0805 (2012 Metric) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Phototransistors are an important type of optical sensor, consisting of a photoelectric emitter and a photomultiplier unit within the same package. A phototransistor has the ability to convert light rays into electrical current, allowing it to be used in various applications such as image processing, machine vision, robotics and automation, acoustic navigation, and biomedical imaging. The use of phototransistors has become increasingly popular over the past several years as they provide a number of advantages over traditional electronic sensors.
The AP2012P3C-P22 is a phototransistor designed for a wide range of applications. It has a single-disc form factor, allowing it to be easily integrated into many projects. The AP2012P3C-P22 has a photo-sensitivity range from 0.02 to 1.00A/W, with a peak wavelength of 850nm. This phototransistor is also capable of detecting very low light levels, making it suitable for many low-light applications.
The working principle of a phototransistor is based on the phenomenon of photovoltaic or internal photoeffect. When exposed to light, the photoelectric emitter sends electrons into the base region of the transistor. These electrons are then considered as the base charge which acts to reduce the collector voltage. This reduction in voltage alters the current through the collector-base junction and changes the current gain of the transistor. This change in current gain is used to detect, amplify, or even detect and amplify the input light.
In the case of the AP2012P3C-P22 phototransistor, the device is designed to be used in applications which require low-cost, low-noise operation. Its high photo-sensitivity and wide dynamic range make it suitable for applications such as medical image processing, surveillance, and robotics. It is also well-suited for applications such as traffic light detection, illumination, and solar cell testing.
The AP2012P3C-P22 phototransistor is also suitable for use in vibration and vibration monitoring systems. This type of system typically uses an array of phototransistors to measure the vibration of a surface. The changes in light intensity due to the vibration are converted into electrical signals which can be analyzed to obtain information about the vibration. The AP2012P3C-P22 phototransistor is capable of accurately detecting vibrations in the range of 0.0001mm with a dynamic range of +_ 0.001%. This makes it ideal for use in vibration monitoring systems.
Overall, the AP2012P3C-P22 phototransistor is a highly capable device which is suitable for a variety of applications. Its properties such as high photo-sensitivity, wide dynamic range, and low-cost make it a popular choice for many applications. The device also offers excellent performance in vibration monitoring systems, making it an ideal choice for this type of application.
The specific data is subject to PDF, and the above content is for reference
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