APM2T80P201256GAN-GTM1 Memory Cards, Modules

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APM2T80P201256GAN-GTM1 is a solid-state drive (SSD). It is an advanced storage device that can provide superior performance, lower latency, and reduced power consumption when compared to traditional spinning hard disk drives (HDDs). It is ideal for applications requiring fast storage and high data throughput, such as browser, mobile device, PC gaming, and server systems.The APM2T80P201256GAN-GTM1 utilizes NAND flash memory chips, which are much faster than conventional spinning hard disk drives. The NAND flash memory chips in the APM2T80P201256GAN-GTM1 utilize multiple layers of flash die, including 3D NAND architecture. The 3D NAND architecture enables the APM2T80P201256GAN-GTM1 to deliver increased capacity and performance.The APM2T80P201256GAN-GTM1 utilises a SATA III 6Gbps interface that allows for up to 6Gbps of transfer speed. This interface also allows for SATA SED (Self-Encrypting Drives) that encrypt data for added security. The APM2T80P201256GAN-GTM1 is also backwards compatible with SATA II 3Gbps and SATA I, which enables it to be used with legacy systems.The APM2T80P201256GAN-GTM1 has a low power consumption, which allows for use in consumer electronics and other embedded systems. The low power consumption and power efficiency allows the APM2T80P201256GAN-GTM1 to be used in applications where battery life is an important factor. The APM2T80P201256GAN-GTM1 is also vibration and shock proof, which makes it suitable for systems used in vehicles.The APM2T80P201256GAN-GTM1 can also be used for long-term data storage applications as its wear-leveling technology provides for reliable data retention in varying environmental conditions over a long period of time. The APM2T80P201256GAN-GTM1 has an Operating temperature range of 0 to 70°C and a Non-Operating temperature range of –55°C to 85°C.The APM2T80P201256GAN-GTM1 also has a mean-time-to-failure rate of up to 2 million hours. This high MTBF rate ensures that the APM2T80P201256GAN-GTM1 is reliable and robust enough for long-term data storage applications.In addition to its superior reliability and capacity, the APM2T80P201256GAN-GTM1 also offers superior performance. The APM2T80P201256GAN-GTM1 can deliver up to 530 MB/s for sequential read and up to 510 MB/s for sequential write speed. Random read/write speed can go up to 95K/75K IOPs, depending on the drive size.Overall, the APM2T80P201256GAN-GTM1 is an excellent choice for applications that require fast storage and reliable performance. With its low power consumption, high performance, and industry-leading MTBF rates, the APM2T80P201256GAN-GTM1 is perfect for use in consumer electronics, embedded systems, PCs, and servers.

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