APSDM001GS3AN-ATW

Solid State Drives (SSDs) are, as the term implies, data storage units which leverage solid state components such as transistors, resistors, capacitors, and magnets instead of the traditional spinning platters and other components used in hard disk drives (HDDs) to store information.One such device, the APSDM001GS3AN-ATW, is a 3-gigabyte, single-level-cell (SLC) industrial grade SSD.The APSDM001GS3AN-ATW features an industrial temperature range of 40°-85° Celsius and is RoHS compliant. It is built with an 8-channel NAND controller and further features an onboard 3-gigabit physical memory with a 0.75 watt power consumption rating.In terms of performance, the APSDM001GS3AN-ATW is capable of sequential read and write speeds of up to 120 megabytes-per-second, with random read and write operations returning averages of 22K I/Ops each. It also features an integrated advanced power-cut toleration system and a unique internal wear-leveling algorithm in order to maximize its longevity.The APSDM001GS3AN-ATW is designed primarily for use in a wide array of industrial applications, including industrial automation, medical and healthcare, aerospace, defense, and telecommunication environments.In terms of its functionality, the APSDM001GS3AN-ATW performs a broad range of activities such as: high-speed data transfer, system boot-up, and data backup, among others. It is also capable of providing real-time data protection and availability, as well as efficient usage of flash memory resources.From a technical standpoint, the APSDM001GS3AN-ATW SSD operates on the principle of semiconductor storage, in which the electrons carried by a current moving between the source and the drain of cadmium selenide (CdSe) film are used to store digital data.In this case, the CdSe film is held between two electrodes, which form a cell. The current passing between these two electrodes causes electrons to move and create charge packets in the CdSe film, and this charge packet is read as a “1” or a “0” by the controller.The actual writing and reading of the data is done through the use of a write/read head, which is placed over the cell to control the current between the two electrodes. This is done by temporarily increasing the voltage applied to the cell.The actual writing and reading of data is also done via software, by writing data into a “logical block address” (LBA) located on the SSD. The LBA is correspon

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