
Allicdata Part #: | AQ12P6418BLF8M-ND |
Manufacturer Part#: |
AQ12P6418BLF8M |
Price: | $ 52.46 |
Product Category: | Memory Cards, Modules |
Manufacturer: | ATP Electronics, Inc. |
Short Description: | 4GB 240 PIN VLP UNBUFFERED NON E |
More Detail: | Memory Module 4GB Module |
DataSheet: | ![]() |
Quantity: | 1000 |
10 +: | $ 47.69100 |
Series: | -- |
Part Status: | Active |
Memory Size: | 4GB |
Package / Case: | Module |
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AQ12P6418BLF8M memory module is a type of electrically erasable programmable read-only memory (EEPROM) that is used to store data. It is a form of non-volatile memory, which means that it will retain the data stored even when the power is removed. These memory modules are commonly used in electronic applications, such as embedded systems.
An EEPROM cell consists of two transistors and a floating gate. When a certain voltage is applied to the gate, the charge stored on the floating gate is altered, allowing for programming or erasing of the cell. In most EEPROMs, a single cell is used to store a single bit of data.
AQ12P6418BLF8M memory module is an 8M bit EEPROM, organized into 4096 x 2048 bits. This memory module has an especially long write and erase cycle of up to 10,000 cycles, making it ideal for applications that require long-term data storage. It also has a fast random access time of 150ns, allowing for quick data access. This module has a wide operating voltage range of 2.0V-5.5V, and is capable of operating in temperatures ranging from -40°C to +85°C.
Applications for AQ12P6418BLF8M memory module include automotive applications, mobile applications, industrial systems, consumer products, medical devices, and other embedded systems. These memory modules are highly reliable and are often used in applications where data storage and retention over long periods is necessary. They are also used for applications that require fast data access and a wide operating voltage range.
The working principle of AQ12P6418BLF8M memory module works on the principle of electrical erasure and programming, as already discussed. The EEPROM cell consists of two transistors and a floating gate. Application of a certain voltage to the gate can cause the charge stored on the floating gate to be altered, thus allowing for programming or erasing of the cell. These memory modules are highly reliable and resistant to data loss, as they will retain the data even when power is removed.
In conclusion, AQ12P6418BLF8M memory module is an 8M bit EEPROM module that is used in a variety of electronic and embedded applications. It has a long write and erase cycle, fast random access time, and a wide operating voltage range of 2.0V-5.5V. Its working principle relies on electrical erasure and programming of a cell, which consists of two transistors and a floating gate. Therefore, AQ12P6418BLF8M memory module is an ideal choice for applications requiring long-term memory storage and reliable data retention.
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