AT25DF041B-MAHNHR-T Integrated Circuits (ICs)

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The AT25DF041B-MAHNHR-T is an widely used memory device. It is a Flash type, non-volatile memory with a normal operating temperature range of 0°C to 65°C and a storage temperature range of -55°C to 125°C. It is well suited for a wide range of applications, including wireless products and other consumer electronic applications.

The AT25DF041B-MAHNHR-T is a 4Mbit serial EEPROM available in 8-Pin PDIP and 8-Pin SOIC packages. It provides a full suite of memory read and write commands, memory protection commands, chip erase commands and block-protection commands. The memory can be divided into four 32KByte sectors that can be individually protected from erasure or programming. The sector-protect feature allows the user to keep important code and data safe from accidental or intentional erase or write attempts.

The AT25DF041B-MAHNHR-T features two types of hardware protection: read-only (RO) and write-only (WO). Read-only protection prevents unintentional erasure or programming of the memory array. Write-only protection prevents unintentional read operations of the memory array. The device also features a high-reliability sector erase command that complies with the JEDEC standard that was developed to meet the emerging requirements of the industrial market.

The AT25DF041B-MAHNHR-T is a 4Mbit serial EEPROM that works on the SPI interface. The device has a simple bus-based architecture, serial data transfer protocol and easy-to-use control functions. The device also supports high-speed data transfers with up to 25MHz clock rate. The device also supports a double-data rate (DDR) feature, which increases the data transfer rate by transferring data on both the rising and falling edges of the clock signal.

The AT25DF041B-MAHNHR-T has a low-power sleep mode for energy savings and a low power standby mode for extended battery life. The device also features a chip select pin that allows the device to be powered down during periods of inactivity. The device also supports a data security mechanism that prevents unauthorized access to the memory array.

The AT25DF041B-MAHNHR-T has a wide operating voltage range of 2.7V to 5.5V. The device also has a high speed write capability of up to 1Mbyte/sec and a high speed read capability of up to 4Mbyte/sec. The device also supports multiple write and read cycles and executes all commands in single cycles.

In summary, the AT25DF041B-MAHNHR-T is a 4Mbit serial EEPROM that provides a cost-effective solution ideal for portable digital applications and consumer electronics. The device is suitable for applications requiring robust memory management and low power operation. It also supports a range of hardware and software protection features to prevent unwanted access and tampering of the memory array.

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