AT25DF512C-MAHN-T Allicdata Electronics

AT25DF512C-MAHN-T Integrated Circuits (ICs)

Allicdata Part #:

1265-1115-2-ND

Manufacturer Part#:

AT25DF512C-MAHN-T

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Adesto Technologies
Short Description: IC FLASH 512K SPI 104MHZ 8UDFN
More Detail: FLASH Memory IC 512Kb (64K x 8) SPI 104MHz 8-UDFN...
DataSheet: AT25DF512C-MAHN-T datasheetAT25DF512C-MAHN-T Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 512Kb (64K x 8)
Clock Frequency: 104MHz
Write Cycle Time - Word, Page: 8µs, 3.5ms
Memory Interface: SPI
Voltage - Supply: 1.65 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 8-UFDFN Exposed Pad
Supplier Device Package: 8-UDFN (2x3)
Description

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AT25DF512C-MAHN-T is a combination of memory and non-memory features that includes features like wear leveling, power failure protection, and other features. It is commonly used for industrial and commercial applications where memory resources are not abundant.

It has a metal-oxide-semiconductor (MOS) structure and a relatively low power consumption. This makes it ideal for applications that do not require high clock speeds and that require low power consumption. Furthermore, it is cost-effective and has a wide variety of features. It is often used for portable devices that need to provide power-saving features such as sleep mode.

It is also used in industrial applications where reliability is important. The power-fail detection feature in the AT25DF512C-MAHN-T allows it to store data during a power outage and then automatically resume work with no lost data. This feature makes it ideal for applications that may be sensitive to data loss due to power outages.

As far as its working principle is concerned, the AT25DF512C-MAHN-T operates on the principle of non-volatile memory. This means that the data stored in it is not lost even when the power is turned off. It uses an array of cells, which are interconnected in order to provide the storage for the data. Each cell is made up of two capacitors, which are connected in series. A voltage is applied to the two capacitors and then the data from one cell is transferred to the next one.

The AT25DF512C-MAHN-T is also equipped with a wear leveling feature. This feature ensures that the wear of the memory is distributed evenly among the cells. This keeps the reliability of the memory at an optimal level. Furthermore, the AT25DF512C-MAHN-T can also resist temperature variations and electromagnetic interference.

In conclusion, the AT25DF512C-MAHN-T is a very useful and versatile memory device. It is cost-effective and it offers a variety of features that make it ideal for a range of applications. Its primary application field is industrial or commercial use and its working principle is based on the non-volatile memory principle.

The specific data is subject to PDF, and the above content is for reference

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