AT25DL161-SSHN-B

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

AT25DL161-SSHN-B is a type of memory that plays an important role in many industries. It is commonly used in embedded systems, communication, industrial control and other fields. The main purpose of this memory is to store and save data. The AT25DL161-SSHN-B uses nonvolatile Flash technology. This means that it can hold data without the need for a power supply. In this way, AT25DL161-SSHN-B provides users with long-term data security.

The AT25DL161-SSHN-B is a 16,777,216 bit or 2M byte nonvolatile serial Flash memory. It is organized as 131,072 bytes per sector and 256 byte per page. The device can support three different SPI instructions set including standard, dual and quad. There are eight memory array sectors, each one can be programmed or erased independently and the procedure can be carried out in bytes, pages, or blocks. It features serial-access memory design, sector erase operation of a single 8K-byte sector is 0.5 second.The AT25DL161-SSHN-B also has a sequence erase that erases all memory array sectors. The functionality of the AT25DL161-SSHN-B is further enhanced by its advanced write protection schemes.

The AT25DL161-SSHN-B has several working principles. Firstly, the AT25DL161-SSHN-B is accessed via the SPI interface. To write data or program, it requires two steps: first the device needs to be enabled with a specific command and then the 8-bit write command needs to be issued. The device then latches the data that is sent after the write command and stores it into the memory. When the programming has completed, the chip validates the data and returns a status flag.

The AT25DL161-SSHN-B also has a high erase algorithm which utilizes a triple erase technique. This technique erases the memory array in three separate stages. The first stage is an initial erase which takes 0.5 seconds. The second stage is a bulk erase which takes 1 second. Finally, the last stage is a verification which takes another 0.5 seconds. This algorithm ensures that the storage is completely and accurately erased.

In addition, the AT25DL161-SSHN-B also features a wide range of write protection options. It can be protected against accidental writes and erasures, and it can also be individually protected or unprotected in sectors or even bytes. This enables users to protect sensitive data and programs from being accidentally or maliciously changed or erased.

Overall, the AT25DL161-SSHN-B is a versatile and reliable memory option for many embedded systems, communication, and industrial control applications. Its wide range of write protection options and advanced erase algorithms make it a secure and reliable option for users who need long-term data security. Additionally, its easy to use interface and software support make it easy to integrate into a wide variety of systems, thus making it an ideal solution for a wide range of industries.

The specific data is subject to PDF, and the above content is for reference