AT25DN011-XMHF-B

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AT25DN011-XMHF-B is a non-volatile memory device that features a serial interface and a low profile small outline package. The device requires no other external components to operate but requires one I/O pin for bidirectional serial communication. It is a multi-level cell (MLC) memory device which is a type of non-volatile memory that allows multiple bits to be stored in a single memory cell.

The AT25DN011-XMHF-B device is a 1 Mbit (128KB) non-volatile programmable read-only memory (PROM) device that offers increased endurance, higher write/erase performance and improved protection circuitry for faster programming, enhanced data retention and improved system reliability.

The device is organized in 3 blocks of 256 pages of 32 bytes each. It has a sector protection lock system, and provides parameters for the initialization of the sector protection register. It also supports write protection in the upper and lower halves of the device. The device is available in a number of packages, including 8-pin SOIC, 8-pin VSSOP, 8-pin USON and 8-pin TSSOP.

In terms of application fields, AT25DN011-XMHF-B is an ideal choice for applications where fast and reliable programming, high endurance and low-power consumption are needed. It has a wide temperature range and is ideal for automotive, medical, security and industrial control applications. It is also suitable for memory expansion in embedded systems, particularly those that require autonomous operation.

In terms of working principle, like other non-volatile memories, the AT25DN011-XMHF-B device uses a floating-gate MOSFET transistor architecture to store one bit of data. Electrical charges are stored on an insulated gate to create an electrically isolated memory cell. This memory cell stores two voltage levels, which represent two data states: "0" and "1". The device operates using a simple serial-interface protocol. Data is transferred serially from the microcontroller to the device using a single I/O pin. When a write operation is performed, the charge stored in the memory cell is altered, allowing the data to be stored or written.

The AT25DN011-XMHF-B device is protected against accidental writes by providing an internal write protection capability and an external write protection option. Internal write protection prevents unintentional writes to the protected area. The AT25DN011-XMHF-B also provides an optional external write/erase protection pin.

The AT25DN011-XMHF-B device offers an endurance of 100,000 cycles and a data retention of 10 years. The device has a write cycle time of 5 milliseconds and read cycle time of 1.5 milliseconds. It also operates at a low power consumption of 20mA (max) during write operations, 20μA (max) during standby, and 2μA (max) during sleep mode.

The AT25DN011-XMHF-B is a compact, reliable and cost-effective non-volatile memory device. It provides efficient and reliable storage for multiple bits of data in various applications requiring high endurance, low power consumption and fast programming. Its small outline package makes it a popular choice for embedded systems with limited board area.

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