AT25XE011-XMHN-B

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

AT25XE011-XMHN-B is a memory that has a variety of useful applications and working principles. It is a type of non-volatile memory, meaning that data stored in the memory is not lost when the power is removed. This type of memory is often used in embedded systems, where it is important to store data without requiring an external power supply.

Application Field of AT25XE011-XMHN-B

AT25XE011-XMHN-B is most commonly found in embedded systems, such as automotive, industrial, and medical devices. Its non-volatility makes it ideal for these types of applications, as it provides the ability to store values and data even after power is removed from the system. Additionally, AT25XE011-XMHN-B is often used in conjunction with other types of memory, such as SRAM or DRAM, to provide additional storage and archival capabilities as needed. The AT25XE011-XMHN-B memory is also well-suited for applications that require frequent writes or reads, such as programmable logic circuits and embedded controllers.

AT25XE011-XMHN-B is also used in consumer electronics, such as digital cameras, cell phones, and PDAs. Because it is non-volatile and has a small form factor, AT25XE011-XMHN-B is ideal for these types of devices, providing a convenient way to store data and settings without requiring power. It is also used in video game systems and computers, where non-volatile memory is critical to maintain and store user preferences, settings, and data.

Working Principle of AT25XE011-XMHN-B

The working principle of AT25XE011-XMHN-B is based on the use of electrically-erasable programmable read-only memory (EEPROM). With this type of memory, data is stored in individual cells which are each addressed individually. Each cell is then programmed or erased with the use of an electrical charge. The charge can be applied to the cell individually, or to multiple cells at once.

When a cell is programmed, a small amount of charge is applied which causes electrons to be stored in the cell. When the cell is erased, a slightly larger amount of charge is applied which causes the electrons to be removed from the cell. The amount of charge applied to the cell is adjusted according to the data that needs to be stored, allowing for data to be stored in a variety of formats.

To read data from the AT25XE011-XMHN-B memory, a current is sent through each cell. This current is adjusted according to the bit value stored in the cell, resulting in a unique current to be read from the memory. This current is then compared to a reference value which is used to determine the bit value stored in the cell.

Conclusion

The AT25XE011-XMHN-B is a type of non-volatile memory which is used in a variety of embedded systems and consumer electronic devices. The memory works by utilizing electrically-erasable programmable read-only memory, which allows for data to be stored and read from individual memory cells by adjusting the amount of electrical charge applied to the cells. This allows for fast and reliable storage of data even when the main power is removed from the system, making AT25XE011-XMHN-B an ideal solution for applications requiring data storage without an external power source.

The specific data is subject to PDF, and the above content is for reference