AT27BV020-12VI Allicdata Electronics
Allicdata Part #:

AT27BV020-12VI-ND

Manufacturer Part#:

AT27BV020-12VI

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Microchip Technology
Short Description: IC EPROM 2M PARALLEL 32VSOP
More Detail: EPROM - OTP Memory IC 2Mb (256K x 8) Parallel 120...
DataSheet: AT27BV020-12VI datasheetAT27BV020-12VI Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tray 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: EPROM
Technology: EPROM - OTP
Memory Size: 2Mb (256K x 8)
Write Cycle Time - Word, Page: --
Access Time: 120ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V, 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 32-TFSOP (0.488", 12.40mm Width)
Supplier Device Package: 32-VSOP
Base Part Number: AT27BV020
Description

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AT27BV020-12VI is a type of non-volatile semiconductor memory which has been extensively used in various applications. It is largely used for both consumer and industrial applications. It has a wide range of uses including data storage, boot-up/firmware code storage and more. In this article, we will go over the AT27BV020-12VI application field and working principle in detail.

Application Field of AT27BV020-12VI

AT27BV020-12VI can be used in different applications, depending on the customer’s needs. The main applications include:

  • Data Storage: AT27BV020-12VI is often used to store large amounts of data like databases, software applications, video files, etc., so it serves as the primary data storage device. It can be used in servers, personal computers, gaming consoles and other electronic appliances. It is also used in automotive and aerospace applications.
  • boot-up and Firmware Code Storage: AT27BV020-12VI is often used to store the boot-up and/or firmware code when a device starts up. This helps to enable the device to perform according to the user\'s expectations. This is mostly used in routers, smartphones and other hand-held devices.
  • Radio Frequency: AT27BV020-12VI can store a wide range of RFID (Radio Frequency Identification) medical device data, enabling faster patient diagnosis and treatment. It is also used in access control systems and high-precision measuring instruments.
  • Mission-critical applications: As AT27BV020-12VI is non-volatile, it is often used for mission-critical applications such as in space exploration and aviation, where non-volatility is a must.
  • Research & Development: AT27BV020-12VI can be used for research and development purposes such as rapid prototyping and substrate-based designs. This makes it an ideal candidate for a wide range of applications.

Working Principle of AT27BV020-12VI

AT27BV020-12VI is a semiconductor memory device. It works on a single-transistor/two-level storage cell concept, as opposed to DRAM (Dynamic Random Access Memory), which is based on a multiple-transistor design. The single-transistor cell offers superior performance in terms of programming and read/write times and provides better power consumption than DRAM.

Each memory cell is composed of two transistors and one capacitor, where the capacitor stores the desired data. When a logic low signal is written to the cell, the transistors are switched on and the capacitor charges up, storing the data. When a logic high signal is written, the same happens but in reverse. When a read operation is performed, the transistors switch on or off depending on the state of the capacitor. This allows for quick and accurate data read/write operations.

AT27BV020-12VI is available in various grades, offering customers greater flexibility. It is also available with a range of package types and sizes. In addition, it offers a wide operating voltage range and power consumption which makes it suitable for a variety of applications.

Conclusion

As seen, AT27BV020-12VI is a popular semiconductor memory device and has been used in many applications. It is available in various grades, package types and sizes and offers a wide operating voltage range and power consumption which makes it suitable for many applications. Its single-transistor/two-level storage cell concept makes it superior to other memory devices in terms of programming and read/write times and power consumption.

The specific data is subject to PDF, and the above content is for reference

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