AT27C010-12TI Allicdata Electronics
Allicdata Part #:

AT27C010-12TI-ND

Manufacturer Part#:

AT27C010-12TI

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Microchip Technology
Short Description: IC EPROM 1M PARALLEL 32TSOP
More Detail: EPROM - OTP Memory IC 1Mb (128K x 8) Parallel 120...
DataSheet: AT27C010-12TI datasheetAT27C010-12TI Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tray 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: EPROM
Technology: EPROM - OTP
Memory Size: 1Mb (128K x 8)
Write Cycle Time - Word, Page: --
Access Time: 120ns
Memory Interface: Parallel
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 32-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 32-TSOP
Base Part Number: AT27C010
Description

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Memory has long formed one of the building blocks of modern computing and communication systems. The AT27C010-12TI is a popular memory device in this category. The AT27C010-12TI is an electrically erasable, programmable read-only memory (EEPROM) device. It provides a storage capacity of 1 Mbit in an 8-pin mini-DIP package.

Application Field

The AT27C010-12TI offers significant advantages over other memory devices in a variety of applications. In automotive electronics, for example, this device is commonly used for calibrations and software programs. In industrial tools and equipment, the EEPROM provides a reliable, cost-effective solution for storing control codes and other data. In medical and telecommunications applications, this device is a popular choice for storing vital system information.

Working Principle

On a basic level, AT27C010-12TI is an integrated circuit (IC) composed of a number of transistors and other components. The purpose of the EEPROM is to store information and keep it safe even in the event of a power outage. Data is stored in the memory using a technique known as Fowler-Nordheim tunneling. This involves the application of a voltage to each cell, causing electrons to tunnel from a floating gate and be erased from the memory.

Writing data to the AT27C010-12TI also requires the application of a voltage. During a write cycle, electrons are injected into the floating gate through either hot-electron injection or channel hot-electron injection. This process allows the EEPROM to store the data that has been written to it. The writing process can be done rapidly and is reversible, meaning the EEPROM can be overwritten easily.

The AT27C010-12TI is an efficient and reliable way to store data. It is widely used in a variety of applications thanks to its robust design, its ease of use, and its ability to retain data even in the absence of power. As technology continues to advance, we can expect to see more of these devices being used in a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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