AT27BV256-90JI Allicdata Electronics
Allicdata Part #:

AT27BV256-90JI-ND

Manufacturer Part#:

AT27BV256-90JI

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Microchip Technology
Short Description: IC EPROM 256K PARALLEL 32PLCC
More Detail: EPROM - OTP Memory IC 256Kb (32K x 8) Parallel 90...
DataSheet: AT27BV256-90JI datasheetAT27BV256-90JI Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: EPROM
Technology: EPROM - OTP
Memory Size: 256Kb (32K x 8)
Write Cycle Time - Word, Page: --
Access Time: 90ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V, 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 32-LCC (J-Lead)
Supplier Device Package: 32-PLCC
Base Part Number: AT27BV256
Description

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AT27BV256-90JI application field and working principle

Memory

The AT27BV256-90JI is a non-volatile electrically erasable and programmable read only memory (EEPROM) device manufactured by Atmel Corporation. It is an ultra-high integration device offering fast programming, a high density of 256Kbits in a 32-pin package, and superior reliability.

Applications

AT27BV256-90JI devices offer fast programming, high-reliability and cost effectiveness which make them ideal for a wide range of applications. These applications include boot and system firmware storage, customization products such as printers, automotive and industrial process controllers, telecommunication systems, PDAs, smart phones and other electronic equipment.

Working Principle

AT27BV256-90JI devices are based on a ferroelectric floating gate technology. This technology uses a high-density polysilicon memory cell matrix combined with a high-reliability multiple-gate oxide layer. The memory cell array is organized into 14 blocks, where each block consists of 8 bytes. The data cells in each byte can be programmed or erased individually, enabling individual bytes in a single block to be programmed or erased separately.The basic write operation involves two steps: programming and verification. In the programming step, a HIGH voltage is applied to the drain of the selected bit cell, which causes the electrons to tunnel from the silicon substrate through the oxide to the floating gate of the cell. This programming method uses Fowler-Nordheim tunneling. The bit cell is verified afterwards to ensure that the written data is correctly programmed.

In the erase operation, a negative charge is applied to the floating gate of the selected bit cell by using hot-electron injection. This causes the electrons to be "pushed out" of the floating gate and into the drain, thus resulting in the erasing of the stored data. A program verify operation is carried out afterwards to ensure that the erased data is correctly erased.

Conclusion

AT27BV256-90JI is one of the most advanced devices in the data storage industry, thanks to its high integration, fast programming, superior reliability and cost effectiveness.These combine to create a versatile EEPROM device which is ideal for a range of applications, from automotive and industrial control to telecommunication systems and smart phones.

The specific data is subject to PDF, and the above content is for reference

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