AT27C010-12PC Allicdata Electronics
Allicdata Part #:

AT27C010-12PC-ND

Manufacturer Part#:

AT27C010-12PC

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Microchip Technology
Short Description: IC EPROM 1M PARALLEL 32DIP
More Detail: EPROM - OTP Memory IC 1Mb (128K x 8) Parallel 120...
DataSheet: AT27C010-12PC datasheetAT27C010-12PC Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: EPROM
Technology: EPROM - OTP
Memory Size: 1Mb (128K x 8)
Write Cycle Time - Word, Page: --
Access Time: 120ns
Memory Interface: Parallel
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TC)
Mounting Type: Through Hole
Package / Case: 32-DIP (0.600", 15.24mm)
Supplier Device Package: 32-DIP
Base Part Number: AT27C010
Description

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The AT27C010-12PC is a one-time programmable non-volatile solid-state memory device that operates on a single 5 volt power supply. It has 112 kB of memory storage capability, an access time of 70 ns, and can be written to over and over again without wearing out. It is suitable for use in data storage, industrial applications, embedded systems, and communications systems. The AT27C010-12PC is widely used in embedded systems, industrial applications, and communications systems, such as cellular phones, vehicle control systems, hand-held systems, and in WiFi applications.

The AT27C010-12PC belongs to the memory family, and is a member of the EPROM, or Erasable Programmable Read Only Memory. It is a type of non-volatile memory, which means it can retain data stored inside it, even when the power supply is disconnected. This makes it particularly suitable and reliable for applications where data needs to be retained even after a power loss. The data stored within the AT27C010-12PC can be written, erased and rewritten without having to replace the chip. This makes the device ideal for use in industrial applications where data needs to be periodically modified and updated.

The AT27C010-12PC operates by placing electrons onto the floating gate of a tunneling oxide layer. The physical structure of the device is a large array of transistors and diodes, which create a chip that is made up of many memory cells. Each cell is made up of an n-channel field effect transistor, a diode-connected transistor, and a polysilicon floating gate. When electricity is applied, the pulses of current cause the electrons to be deposited onto the floating-gate of the tunneling oxide layer. This has the effect of trapping the electrons, causing them to be stored. When the power is turned off, the electrons remain trapped and the data stored in the memory is retained.

The memory of the AT27C010-12PC can be written and updated using programming techniques such as In-System Programming (ISP). This allows the device to be programmed and re-programmed in-place, without the need for additional programming hardware. Due to its high memory capacity, the AT27C010-12PC can be used for applications that require large amounts of data, such as data logging and data acquisition.

In conclusion, the AT27C010-12PC is a versatile and reliable non-volatile memory device, particularly suitable for data storage, industrial applications, embedded systems, and communications systems. It is a member of the EPROM family, and can be written to and rewritten without requiring the replacement of the chip. Its easy-to-use In-System Programming features, and high memory capacity make it an ideal choice for a variety of data logging and data acquisition applications.

The specific data is subject to PDF, and the above content is for reference

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