AT27LV256A-15TI

Series:	--
Packaging:	Tray
Part Status:	Obsolete
Memory Type:	Non-Volatile
Memory Format:	EPROM
Technology:	EPROM - OTP
Memory Size:	256Kb (32K x 8)
Write Cycle Time - Word, Page:	--
Access Time:	150ns
Memory Interface:	Parallel
Voltage - Supply:	3 V ~ 3.6 V, 4.5 V ~ 5.5 V
Operating Temperature:	-40°C ~ 85°C (TC)
Mounting Type:	Surface Mount
Package / Case:	28-TSSOP (0.465", 11.80mm Width)
Supplier Device Package:	28-TSOP
Base Part Number:	AT27LV256

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AT27LV256A-15TI Memory

The AT27LV256A-15TI is a 256K-bit, 3-volt, byte-wide, low voltage, CMOS, asynchronous (self-timed), Non-Volatile Static RAM (NVSRAM). It offers low-current consumption, high endurance and data retention, and low-voltage operation for portable, battery-operated applications and industrial/automotive applications, as well as a wide variety of other applications.The AT27LV256A-15TI operates from a single 3.0V or 1.8V power supply. All data inputs are CMOS compatible and allow for a “tri-state” data bus which simplifies the data I/O\'s. All inputs are TTL compatible. Data at the output is valid when CE is low and the output buffer is enabled. The output is CMOS compatible and available in TTL levels when the output is enabled.The AT27LV256A-15TI offers data protection and data retention during power down. Data can also be protected upon power up by isolating the write/ erase operations until after power-up.The AT27LV256A-15TI also offers a range of optional features including Byte Control (OE), Page (BL) Control, sector protection, and Bulk Erase. It has an address space of 32K words and a data space of 32K bytes. It has a data access time of 45ns and holds 10,000 write/erase cycles. It has a data retention of 10 years and ECC support.AT27LV256A-15TI is well suited for a variety of applications such as storage for consumer and industrial products including handheld information devices, personal digital assistants, asset tracking and inventory management, automotive applications, and solid-state drives.In terms of its working principle, the AT27LV256A-15TI is a type of non-volatile memory that utilizes floating gate transistors produced with CMOS technology.The memory cell is composed of a cell array composed of a transistor, a control gate and a floating gate. The drain of the transistor is connected to a selected bit line, the source is connected to a reference voltage, and the control gate is connected to a selected word line. The floating gate is connected to the control gate and insulated from the transistor by a tunnel oxide.When writing the cell, a voltage is applied across the control gate and the drain, causing Fowler-Nordheim tunneling. The voltage on the control gate causes electrons to tunnel from the control gate to the floating gate, which increases the density of the floating gate. This increased density causes the threshold voltage of the transistor to increase, which causes the transistor to become “on” and the cell to become “written”.To read the cell, the voltage applied to the control gate is reversed. If the cell is in its “written” state, then the voltage across the drain causes the transistor to become “on” and the stored data is read. If the cell is in its “erased” state, then the voltage on the drain is not sufficient to cause the transistor to “turn on”, and the data stored in the cell will not be readable.The AT27LV256A-15TI is a reliable and low-power device with superior performance. It offers data protection, data retention during power up/down, and sector protection and other features to ensure the long-term reliability of the data stored by the device. Its wide range of applications and low-power operation make it an ideal choice for a variety of memory applications.

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