AT28C010E-12EM/883

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Memory is an important component of modern digital devices. Its performance has a great influence on the performance of the entire digital circuit system. AT28C010E-12EM/883 is a one-megabit (128 Kilobyte) CMOS non-volatile memory device developed by Atmel Corporation.

AT28C010E-12EM/883 consists of four address registers, comprising two 8-bit offset registers, an 8-bit base register and a 12-bit base register. The two 8-bit offset registers represent the lower 16 address bits of the 32-bit address and the 12-bit base register provides the upper 16 address bits. The address provided to these registers is considered to be shifted right two bits. Thus, only the 8-bit and 12-bit registers are used to provide the full address range capability of the device.

The data width of AT28C010E-12EM/883 is 8-bit. It is available in a range of access times from 125 ns to 500 ns. It has an Automatic Address Increment (AAI) mode that allows addresses to increment automatically to the next memory location after each write cycle, thereby eliminating the overhead of address setup for data streaming.

AT28C010E-12EM/883 can be operated in either an internal or an external program mode. In the internal mode, the internal address and data bus generated by the processor are utilized. The external program mode requires an external address and data bus. It also supports software write protection. The device also has an option for automatic write or read after power-on reset (POR).

AT28C010E-12EM/883 finds its application in consumer electronic applications, such as in home appliances and gaming consoles, as well as in industrial uses. It is used in parts of core systems, microcontrollers and computer systems. Its non-volatile random-access memory (NVRAM) feature makes it suitable for data logging and storing machine parameters.

The working principle of AT28C010E-12EM/883 is based on the use of the Fowler-Nordheim tunneling effect.This effect occurs when an electron tunneling effect between two gate electrodes is induced by an electric field. The voltage applied to the gate determines the direction of tunneling of the electrons, thus enabling the writing to or reading from a memory cell with a very low current. The number of bits that can be stored in a single cell depends on the number of tunneling elements and the size of the tunneling elements used.

In addition to the tunneling effect, AT28C010E-12EM/883 also relies on flash erasing, which uses hot electron injection. Hot electron injection is a process in which electrons are accelerated by a large voltage, making them move at a very high speed and causing them to become ‘hot’. The hot electrons can be used to erase memory cells by injecting them into the target memory cell, thus altering its stored information.

To sum up, AT28C010E-12EM/883 is a one-megabit CMOS non-volatile memory device developed by Atmel Corporation that is widely used in consumer electronic applications, industrial uses and core systems. Its working principle is based on the use of the Fowler-Nordheim tunneling effect combined with flash erasing.

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