AT28C64B-15JU

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The AT28C64B-15JU is a type of non-volatile memory, meaning that data is retained even when power is removed from the chip. The AT28C64B-15JU is an 8-pin EEPROM (electrically erasable programmable read-only memory) chip, featuring an 8-bit wide data path and 65,536 bits of long-term memory. This type of memory utilizes floating gate transistors to store data that can be programmed and erased with a low voltage electrical pulse.

The AT28C64B-15JU has a variety of applications extending across many industries, including automotive, medical, industrial, and consumer electronics. This type of memory is often used in inexpensive systems where a small amount of data needs to be stored, such as information about settings and configuration. In addition, it can also be used to store vital information that needs to be accessed quickly and reliably, like authentication codes and encryption keys. The AT28C64B-15JU is also suited for data logging applications, such as recording medical information, environmental data, or industrial performance metrics.

The working principle of the AT28C64B-15JU is based on an Electron Tunneling technology. The memory is made up of an array of floating gate transistors, each one capable of storing a single bit. Each transistor is insulated by a thin tunneling dielectric material that separates the floating gate electrode from the substrate. When a small voltage is applied between its control gate and source, electrons are able to \'tunnel\' through the dielectric material and accumulate or deplete in the floating gate, thus charging or discharging the transistor. This change in charge can represent a 0 or a 1, thus allowing data to be written to the memory cell.

This type of EEPROM requires a high voltage to erase the memory, usually around 12-15 volts, because transistors are used. In order to program the memory, the voltage needs to be around 7-10 volts and remain for a few milliseconds. This programming voltage is applied to the control gate of the device, therefore allowing electrons to tunnel through the oxide layer. These electrons are then trapped in the oxide, technically changing the charge distribution of the floating gate. To read from the AT28C64B-15JU, the voltage applied to the control gate must be around 4-5 volts.

The AT28C64B-15JU is a versatile and reliable type of memory, especially suited for applications needing reliable access to small amounts of data. Its low voltage programming and reading requirements, combined with its ability to retain data even when power is removed, make it a popular choice for a variety of applications.

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