AT49BV002NT-12TI

Series:	--
Packaging:	Tray
Part Status:	Obsolete
Memory Type:	Non-Volatile
Memory Format:	FLASH
Technology:	FLASH
Memory Size:	2Mb (256K x 8)
Write Cycle Time - Word, Page:	50µs
Access Time:	120ns
Memory Interface:	Parallel
Voltage - Supply:	2.7 V ~ 3.6 V
Operating Temperature:	-40°C ~ 85°C (TC)
Mounting Type:	Surface Mount
Package / Case:	32-TFSOP (0.724", 18.40mm Width)
Supplier Device Package:	32-TSOP
Base Part Number:	AT49BV002

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Introduction

The AT49BV002NT-12TI memory is a type of high-density non-volatile memory that is used in many applications. It has a wide range of uses and is often used in data storage applications, such as embedded systems.

Application Field

The AT49BV002NT-12TI is a highly reliable memory solution and is typically used in industrial and automotive applications. The memory can also be used in embedded system applications, such as memory mapping systems and firmware storage solutions. Additionally, the AT49BV002NT-12TI can be used in medical and military applications for secure data storage and retrieval.

Working Principle

The AT49BV002NT-12TI memory uses the EEPROM cell technology which is composed of floating-gate transistors. These transistors are connected to a charge pump circuit which is able to evenly distribute the charge across the transistors. The transistors can then store the charge which represent a binary value (1 or 0). The transistors are arranged in an array and each array is connected to an internal register. The register stores the value of the cells in the array, which can then be read or written to by the user.The memory also features a write-protection mechanism which prevents accidental overwriting of data stored in the memory. The write-protection is enabled or disabled by writing a specific data command to the write-protection register.

Conclusion

The AT49BV002NT-12TI is a high-density non-volatile memory solution that is suitable for a wide range of industrial, automotive, medical and military applications. The memory uses EEPROM cell technology and features a write-protection mechanism that prevents accidental overwriting of stored data.

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