Allicdata Part #: | AT49BV512-12JC-ND |
Manufacturer Part#: |
AT49BV512-12JC |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Microchip Technology |
Short Description: | IC FLASH 512K PARALLEL 32PLCC |
More Detail: | FLASH Memory IC 512Kb (64K x 8) Parallel 120ns 32... |
DataSheet: | AT49BV512-12JC Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH |
Memory Size: | 512Kb (64K x 8) |
Write Cycle Time - Word, Page: | 30µs |
Access Time: | 120ns |
Memory Interface: | Parallel |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | 0°C ~ 70°C (TC) |
Mounting Type: | Surface Mount |
Package / Case: | 32-LCC (J-Lead) |
Supplier Device Package: | 32-PLCC |
Base Part Number: | AT49BV512 |
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AT49BV512-12JC is a family of non-volatile, flash semiconductor memories available in an 8-pin SOIC package. It belongs to the Memory category and has a wide range of potential applications, including device controller and system memory for computers and consumer electronic products. This article discusses the application fields and working principle of AT49BV512-12JC.
Applications
AT49BV512-12JC is designed for use in many consumer electronic and system products, such as telecommunication systems, consumer appliances, audio and video devices, automotive and industrial control systems. In addition, it can be used for data storage and for providing memory protection. The device has a wide temperature operating range of -40 ºC to +85 ºC and its low power consumption makes it suitable for a variety of applications.
Features
The AT49BV512-12JC includes a read-only memory (ROM) to store program code, a random access memory (RAM) to store data, and various input/output (I/O) ports. It has a 512Kbytes of non-volatile memory, which is organized as 32 pages, each containing 4Kbytes. The device also allows for data to be read, written and erased with a single cycle operation. Its high-speed clock rate of up to 7.2MHz ensures fast read and write times and can save program execution times and system performance. The device features fast data lock protection and a reset circuit for power-up reset and other reset operations.
Working Principle
The working principle of AT49BV512-12JC is based on a two-transistor memory cell structure, which is referred to as the floating gate cell structure. This design allows for both data storage and data writing while also preventing data leakage. Electrical charges are stored in the floating gate and provide information on the state of the memory array.
Writing can be done by either setting, resetting or erasing the data stored in the cell. To do this, the device uses a range of commands, such as write enable and page erase, to set or reset the memory cell. Data is then written to the memory cell using a write command and the device then processes the information and stores the data accordingly.
The AT49BV512-12JC also uses a number of other techniques to protect the data stored in the device. These techniques include sector protection, write protection and power-down protection. These techniques stop data from being corrupted or erased by other devices, software or hardware failures and electrical noise.
Conclusion
AT49BV512-12JC is a non-volatile, flash semiconductor memory that is suitable for use in a wide range of applications. This article has discussed the application fields and working principle of AT49BV512-12JC, including its read and write capabilities, data protection techniques and its two-transistor memory cell structure. Overall, the AT49BV512-12JC is a highly functional and reliable device that is suitable for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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