AT49BV002T-12VI

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Memory products are used in a broad range of applications, from consumer electronics to industrial automation, and provide excellent data storage solutions. AT49BV002T-12VI, a type of memory product, is a Micron Technology DRAM, compatible with industry standard. This memory device is suitable for use in standard controller designs and has a wide range of applications.

The AT49BV002T-12VI is a 2M x 16 DRAM, with access times of 45 ns and a pL-server design. It is a 2M x 16 DRAM with 1 byte per bit (1 byte/bit). It is organized as 2M words of 16 bits, providing storage for up to 16 MB of data. The AT49BV002T-12VI memory device can operate at a maximum frequency of 66 MHz. It has an asynchronous burst read and write capability for greater performance. It is packaged in a 64-pin TSOP-I package.

The AT49BV002T-12VI memory device provides several features that make it suitable for a variety of applications. It is capable of operating at high speeds and provides an access time of 45 ns. It supports asynchronous burst read and write operations, allowing for relatively high data transfer rates. Additionally, the device utilizes advanced power management techniques, which allows it to consume less power than other comparable memory devices. This makes it a suitable choice for battery-operated applications.

As far as is working principle is concerned, AT49BV002T-12VI is based on dynamic random access memory (DRAM) technology. DRAM works by using a tiny capacitor to store a bit of data, a 0 or a 1, within an array of capacitors. When a capacitor needs to be charged or discharged, a transistor is used to control the flow of electricity necessary to capacitors. The capacitors are divided into individual cells, which are then organized into rows and columns, or “words” and “bits.” Each bit of data can then be read from or written to the memory device.

The AT49BV002T-12VI memory device can be used in a variety of applications. It is suitable for use in embedded system, storage devices and computers that require high speeds and memory density. The device is also suitable for military and wireless applications, due to its low power consumption and fast access times. Additionally, its wide data bus width makes it suitable for use in high-end workstations and servers that require large amounts of data to be stored.

In conclusion, the AT49BV002T-12VI is a DRAM memory device suitable for a wide variety of applications. It has a fast access time of 45 ns and a wide data bus width. Additionally, the device utilizes advanced power management techniques, allowing it to consume less power than other comparable memory devices. Its wide range of applications and features make the AT49BV002T-12VI an ideal choice for storage, embedded systems, computers, military and wireless applications.

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