
Allicdata Part #: | AT49BV002T-90JC-ND |
Manufacturer Part#: |
AT49BV002T-90JC |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Microchip Technology |
Short Description: | IC FLASH 2M PARALLEL 32PLCC |
More Detail: | FLASH Memory IC 2Mb (256K x 8) Parallel 90ns 32-P... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Specifications
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH |
Memory Size: | 2Mb (256K x 8) |
Write Cycle Time - Word, Page: | 50µs |
Access Time: | 90ns |
Memory Interface: | Parallel |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | 0°C ~ 70°C (TC) |
Mounting Type: | Surface Mount |
Package / Case: | 32-LCC (J-Lead) |
Supplier Device Package: | 32-PLCC |
Base Part Number: | AT49BV002 |
Description
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Introduction
AT49BV002T-90JC is a type of Memory that is widely used in many applications due to its performance and reliability. It is a 16Mbit (2MB x 8 bits) high-performance static random access memory (SRAM) based on CMOS technology. AT49BV002T-90JC has an operating frequency of 90Mhz and provides a 3.2ns data access time. It also has a high data retention time of greater than 20 milliseconds. With the help of its on-chip error correction code, this device can provide reliable access to stored data.Applications
AT49BV002T-90JC Memory can be used in a wide range of applications. Some of these include:- Automotive
- In-car entertainment systems
- Infotainment systems
- Safety systems
- ABS (Anti-lock Braking Systems)
- Industrial
- Factory automation systems
- Robotic systems
- Machine tools
- Process control systems
- Consumer
- GPS navigation systems
- TV set-top boxes
- Home entertainment systems and game consoles
Working Principle
The working principle of AT49BV002T-90JC Memory can be explained in four parts.- Write Cycle
- The data is written to the memory cell by applying a voltage higher than the noise margin.
- When the applied voltage exceeds a certain threshold, the data is stored in the memory cell.
- The voltage is then removed, and the data remains stored in the cell.
- Read Cycle
- The data stored in the memory cell is read by applying a voltage higher than the noise margin.
- The voltage is removed, and the data remains stored in the cell.
- Refresh Procedure
- A periodic voltage is applied to the memory cell to ensure that the stored data is not lost.
- This is done by refreshing the data at regular intervals.
- Error Correction
- AT49BV002T-90JC Memory employs an on-chip error correction code (ECC) to provide reliable access to stored data.
- The ECC is used to detect and correct any errors that occur when accessing the memory cell.
Conclusion
AT49BV002T-90JC Memory is a reliable and high-performance device that is suitable for a wide range of applications. It has a write cycle, read cycle, refresh procedure, and on-chip error correction code, which make it highly reliable for storing and accessing data. AT49BV002T-90JC Memory can be used in automotive, industrial, and consumer applications.The specific data is subject to PDF, and the above content is for reference
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